Investigations of exciton luminescence and absorption spectra of InSe (GaSe) lamellar semiconductors doped with different kinds of compounds at T = 1.8 K are carried out. It is found that changes in the luminescence intensity of free and bound excitons are due to screening of Coulomb interaction between electron and hole. Increase of free excitons luminescence intensity in InSe crystals activated by holmium ions is attributed to "healing" of metal and chalcogenide vacancies and also to interlaminar interaction increase due to exchange interaction of local formations, i.e. holmium ions.Es werden bei T = 1,8 K Untersuchungen der Exzitonenlumineszenz-und Absorptionsspektren von InSe (GaSe)-Schichthalbleitern, die mit unterschiedlichen Verbindungen dotiert werden, durchgefiihrt. Es wird gefunden, daB Anderungen in der Lumineszenzintensitat von freien und gebundenen Exzitonen durch die Abschirmung der Coulomb-Wechselwirkung zwischen Elektron und Loch hervorgerufen werden. Der Anstieg der Lumineszenzintensitat freier Exzitonen in durch Holmiumionen aktivierten InSe-Kristallen wird dem ,,Ausheilen" von Metall-und Chalkogen-Leerstellen zugeordnet und auch dem Ansteigen der Interschichtwechselwirkung infolge Austauschwechselwirkung lokaler Formationen, z. B. Holmiumionen.
Long-wavelength Optical F'honons i n Ag3B5111C9v1 S i n g l e Cryetale I n a paper of TACIROV e t a l . on t h e base of a physico-chemical a n a l y s i s I IIIc V I -B, I1' C and a e t a t e diagram of A B p o e e i b i l i t y of t h e formation of new semiconductor compounde of A3$"Cz1-type (where A -Cu,Ag; B -Ga,In; C -S , Se,Te) has been revealed. velength o p t i o phonons i n t e r n a r y semiconductor c r y s t a l s Ag31n5S9, quasi-binary systems t h e 3 The present paper shows t h e r e e u l t a of i n v e e t i g a t i o n s of long-wa-Ag31n5Seg, Ag31n5Teg, Ag3Ga5Seg, Ag3Ga5Teg. preeenoe of a v o l a t i l e component makes It d i f f i c u l t t o o b t a i n s i n g l e c r y s t a l s a s a d e f i n i t e temperature g r a d i e n t is needed during c r y e t a l l iz a t l o n that lead8 t o r e d i s t r i b u t i o n of t h e v o l a t i l e component end t o t h e dieturbanom of etoiohiometry. Thle f a o t w e taken i n t o account when grorring t h e c r y e t a l e s t u d i e d using a h e a t e r of E s p e c i a l conetruction. The r e l i a b i l i t y of t h e produotion of t h e compounde wae confirmed by X-ray and thermal analyses. The c r y s t a l s i n v e s t 1 a t e d c r y e t a l l i z e in t h e hexagonal l a t t i o e The e i n g l e c r y s t a l s s t u d i e d were g r o w by t h e Bridgman method. The f (space e w e t r y group D6h (P6/-)). The u n i t c e l l of t h e s e c r y s t a l e containe one formula u n i t . The v i b r a t i o n a l s p e c t r a were i n v e s t i g a t e d by t h e long-wavelength I R speotroeoopy method. The I R r e f l e c t i o n s p e c t r a were recorded i n t h e frequency range of 80 t o 400 cm-' using a long-wave vacuum d i f f r a c t i o n IR-Spectrometer (wlth a t r a y s e c t i o n behind t h e monochromator) with a r e s o l u t i o n of 1 cm-l. Ag31n5Sg (Se,, Teg), and Ag3Ga5Seg (Teg), r e s p e c t i v e l y , taken a t room temperature.Figures 1 and 2 ehor t h e I R r e f l e c t i o n e p e c t m of
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