Fabrication and performance of 1.5μm GaInAsP travelling-wave laser amplifiers with angled facets

Zah, Chung−En; Osinski, J.S.; Caneau, C.; Menocal, S.G.; Reith, L.A.; Salzman, J.; Shokoohi, F.K.; Lee, T.P.

doi:10.1049/el:19870695

Cited by 54 publications

(5 citation statements)

References 4 publications

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“…With a 100 nm feature size, the coupler shows 81.5% power transmissivity at a length of 31 m. The scattering loss and the reflectivity are larger than those of the coupler with a 20 nm feature size, due to a less smooth effective index transition. The reflectivity can be simply reduced by making tilted subwavelength structures as the overlap ð r Þ will be significantly reduced, similar to the reflection suppression scheme usually adopted in semiconductor optical amplifiers [27]. The subwavelength coupler is much shorter than the adiabatic lateral taper coupler [13], which indicates a considerable reduction of the absorption loss.…”

Section: Design and Simulation Resultsmentioning

confidence: 99%

Efficient Active-to-Passive Light Coupling of InGaAsP/InP Laser Using Subwavelength Coupler

Liang

et al. 2013

IEEE Photonics J.

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We propose a subwavelength coupler for efficient light coupling from an InGaAsP/InP laser to a passive waveguide. The active-to-passive coupling device is designed on the asymmetric twin waveguide (ATG) platform with two InGaAsP layers: one is used as the laser active layer, and the other with a wider band gap is used as the guiding layer of the passive waveguide. By introducing subwavelength trenches in the active InGaAsP layer, the subwavelength coupler is designed to provide a gradual effective index transition region, and it couples the light between the vertically separated active and passive layers. Simulation result shows that coupling efficiency of 86.5% is achieved at a length of only 31 m.

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Section: Design and Simulation Resultsmentioning

confidence: 99%

Efficient Active-to-Passive Light Coupling of InGaAsP/InP Laser Using Subwavelength Coupler

Liang

et al. 2013

IEEE Photonics J.

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“…The estimated reflectivities tend to increase with decreasing wavelength, which is similar to those for (5) to (11) in areas (A) and (C). Since the surface SiO 2 ablation etching increased the reflectivity from 0.3 to 0.5% in this experiment, potential combinations are labeled by points ( 5) to (7) in area (A). From this analysis, we recognize that the thickness of the TiO 2 layer of the deposited AR film should be decreased to reduce reflectivity.…”

Section: Discussionmentioning

confidence: 99%

“…This low reflectivity is achieved by introducing an antireflection (AR) facet film, 6) a tilted waveguide structure, 7) or a window structure. 8) Of these techniques, the facet film 9) plays an essential role in obtaining high-performance SOAs, optical switches, and PLCs.…”

Section: Introductionmentioning

confidence: 99%

“…Semiconductor optical amplifiers (SOAs), 1,2) as well as other devices such as semiconductor optical switches 3,4) and planar lightwave circuits (PLCs), 5) require low reflectivity at both their facets. This low reflectivity is achieved by introducing an antireflection (AR) facet film, 6) a tilted waveguide structure, 7) or a window structure. 8) Of these techniques, the facet film 9) plays an essential role in obtaining high-performance SOAs, optical switches, and PLCs.…”

Section: Introductionmentioning

confidence: 99%

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Analysis of Low-Reflection Facet Film for Semiconductor Optical Amplifiers Using Ablation Etching

Takeshita

Kato

Sugo

2006

jjap

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The reflectivity of a facet film for semiconductor optical amplifiers (SOAs) has been analyzed using laser ablation etching, which changes the ripple of spectrum light. We propose a method of estimating the optimum thicknesses of TiO 2 and SiO 2 layers by observing the change in reflectivity after ablation etching. We used this method to estimate the optimum thicknesses and reduce reflectivity, while bringing the thicknesses close to their optimum values. Ablation etching is a promising technique for analyzing facet reflectivity after facet coating.

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“…The tilted waveguide structure could well eliminate the Fabry-Perot resonance, and the broad spectrum could easily be realized. 20) Then, as the second growth, the ridge structure was buried with an n-type In 0:49 Ga 0:51 P current blocking layer. Next, a ptype Al 0:33 Ga 0:67 As cladding layer and p-type GaAs cap layer were grown after removing the SiO 2 mask.…”

mentioning

confidence: 99%

Demonstration of 1.0 µm InGaAs High-Power and Broad Spectral Bandwidth Superluminescent Diodes by Using Dual Quantum Well Structure

Ohgoh

Mukai

Yaguchi

et al. 2013

Appl. Phys. Express

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We demonstrate 1.0 µm InGaAs high-power and broad spectral bandwidth superluminescent diodes (SLDs). Based on the experimental analysis, it is clarified that the important design parameters are the emission wavelength difference between the dual quantum wells, and the optical confinement factor in the dual quantum well structure to achieve high power and broad spectral bandwidth simultaneously. As a result, we obtained SLDs with 33.4 mW CW power and 77.5 nm full width at half maximum (FWHM) spectral bandwidth. These results correspond to a 1.4-fold increase in spectral bandwidth and a 1.65-fold increase in output power, compared with the single quantum well SLD.

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Fabrication and performance of 1.5μm GaInAsP travelling-wave laser amplifiers with angled facets

Cited by 54 publications

References 4 publications

Efficient Active-to-Passive Light Coupling of InGaAsP/InP Laser Using Subwavelength Coupler

Efficient Active-to-Passive Light Coupling of InGaAsP/InP Laser Using Subwavelength Coupler

Analysis of Low-Reflection Facet Film for Semiconductor Optical Amplifiers Using Ablation Etching

Demonstration of 1.0 µm InGaAs High-Power and Broad Spectral Bandwidth Superluminescent Diodes by Using Dual Quantum Well Structure

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