The characteristics of broadband superluminescent diodes (SLDs) are presented. The longitudinal bandgap modulated InGaAs/GaAs multiple quantum wells of broadband SLDs are grown by selective area metal organic vapour phase epitaxy (MOVPE) growth. The centre wavelength was 1060 nm. The 3 dB bandwidth was 130 nm and the 10 dB bandwidth was 174 nm. The output power was 0.3 mW.
We demonstrate 1.0 µm InGaAs high-power and broad spectral bandwidth superluminescent diodes (SLDs). Based on the experimental analysis, it is clarified that the important design parameters are the emission wavelength difference between the dual quantum wells, and the optical confinement factor in the dual quantum well structure to achieve high power and broad spectral bandwidth simultaneously. As a result, we obtained SLDs with 33.4 mW CW power and 77.5 nm full width at half maximum (FWHM) spectral bandwidth. These results correspond to a 1.4-fold increase in spectral bandwidth and a 1.65-fold increase in output power, compared with the single quantum well SLD.
A key component of the OCT technique is the light source with widely spectrum. Extremely broadband 1.0 µm semiconductor light sources are fabricated with two kinds of device structures of multiplexing emitting layer. The measured spectra of the fabricated device with "longitudinal bandgap modulated structure" show that the full-width at half-maximum spectral width could be as large as 156 nm. The wavelength swept sources which contain a fabricated device with "asymmetric dual emitting layers structure" have a center wavelength of 1.06 µm, wavelength range of 90 nm, scanning rate of 2kHz.
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