High quality GaAs films with dislocation densities of 2–3×106 cm−2 on (100) Si substrates have been obtained by thermal cycle growth using the metalorganic chemical vapor deposition method. Significant reduction effects of dislocation density in the GaAs layers on Si have been analyzed by a simple model, in which annihilation and coalescence of dislocations are assumed to be caused by dislocation movement under thermal stress. Relaxation of thermal stress in the GaAs films on Si during thermal annealing has also been observed.
High quality GaAs films with dislocation densities of 1–2×106 cm−2 on (100)Si substrates have been obtained for combination of strained-layer superlattice insertion and thermal cycle growth using the metalorganic chemical vapor deposition method. In this letter, remarkable reduction effects of dislocation density in the GaAs layers due to InGaAs/GaAs and InGaAs/GaAsP strained-layer superlattice insertion on Si have been analyzed by calculating the dislocation force exerted by the misfit due to the strained-layer superlattice insertions. Threshold layer thickness needed for dislocation reduction and critical thickness for dislocation generation have been clarified for several strained-layer superlattice systems.
High-quality GaAs films with a dislocation density of 2×106 cm−2 on (100) Si substrates have been obtained by thermal cycle annealing using the metalorganic chemical vapor deposition method. Dislocation behavior in GaAs/Si has been considered. Significant reduction effects of dislocation density in the GaAs layers on Si due to thermal annealing have been analyzed by a simple model, in which annihilation such as coalescence of dislocations is assumed to be caused by dislocation movement under high thermal stress and temperature. Numerical analysis suggests that excellent quality GaAs/Si films with a dislocation density of less than 105 cm−2 will be realized if thermal cycle annealing is carried out more than 1000 times without thermal degradation of the GaAs/Si.
Room-temperature cw operation of an InGaAs/InGaAsP multiple quantum well (MQW) laser diode on a Si substrate is reported. The MQW laser emits at a 1.54 μm wavelength and exhibits no degradation after over 2000 h of operation. Employing a hybrid organometallic vapor phase epitaxy/vapor mixing epitaxy method and a layer structure for improving crystalline quality, high-quality MQW layers are obtained. A stable longitudinal mode spectrum demonstrates the effectiveness of the MQW active layer.
Heteroepitaxy of a highly mismatched system (-8%), InP lSi, has been studied using low-pressure organometallic vapor phase epitaxy. GaAs buffer layer effects on residual stress and defect density in InP/Si have been clarified. Using a I-pm-thick GaAs buffer layer, residual stress in the InP layer has been reduced to as low as 2x 10 8 dyn/cm 2 compared to -4X 10 8 dyn/cm 2 for InP directly grown on Si. Moreover, the GaAs buffer layer has also been confirmed to be effective for improving InP lSi quality by evaluation of etch-pit density, x-ray diffraction measurement, and cross-sectional transmission electron microscopy. Electrical properties of InP layers on GaAs/Si were evaluated with the van der Pauw and deep level transient spectroscopy (DL TS) methods. The heteroepitaxiai layer's own electron trap has also been observed by DL TS measurements. For an lnP IGaAs/Si structure, InP growth temperature effect on surface morphology and etch-pit density is also shown. High quality InP films with an etch-pit density of 8X 10 6 cm-2 have been obtained on Si substrates by using thermal cycle growth and InP IGaAs/Si structure.
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