Fabrication and microwave characterisation of multilayer circuits for MMIC applications

Wang, Q.H.; Gokdemir, T.; Budimir, D.; Karacaoglu, U.; Rezazadeh, A.A.; Robertson, I.D.

doi:10.1049/ip-map:19960228

Cited by 24 publications

(4 citation statements)

References 12 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The higher the dielectric constant with respect to , and also the thicker the additional layer, the higher the increase. This behavior gives the designers one more degree of freedom, especially in the case of designing quasi-ideal couplers in monolithic technology, in which the multilayer process with well-controlled thicknesses of deposited dielectric and metal layers is well mastered [17]. In the structures of the lines from Fig.…”

Section: Analysis Of Coupled Microstrip Linesmentioning

confidence: 99%

Quasi-ideal multilayer two- and three-strip directional couplers for monolithic and hybrid MICs

Sachse

Sawicki

1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

In this paper, the properties of multilayer two-and three-strip asymmetric coupled lines are described using their coupled-mode parameters. Examples of quasi-ideal, microstrip, and coplanar directional couplers designed in monolithic and hybrid microwave integrated-circuit technology, consisting of various layered structures of bilevel and trilevel coupled lines, are presented together with experimental results for two 3-dB couplers on ceramic-filled polytetrafluoroethylen and polyimide laminates.

show abstract

Section: Analysis Of Coupled Microstrip Linesmentioning

confidence: 99%

Quasi-ideal multilayer two- and three-strip directional couplers for monolithic and hybrid MICs

Sachse

Sawicki

1999

IEEE Trans. Microwave Theory Techn.

View full text Add to dashboard Cite

show abstract

“…The GaAs MMIC technology is very attractive for many high‐frequency applications as it allows achieving small size, light weight, high reliability, multifunctional capability, low cost, good reproducibility, and high‐volume production. An effective way of developing highly integrated MMICs is based on using the multilayer three‐dimensional (3‐D) technology 11‐15 . An improved version of the conventional AlGaAs/GaAs lattice‐matched HEMT is given by the AlGaAs/InGaAs/GaAs pseudomorphic HEM (pHEMT) 16,17 .…”

Section: Introductionmentioning

confidence: 99%

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT

Alim

Ali

Crupi

2021

Int J Numerical Modelling

View full text Add to dashboard Cite

The key objective of this study is to check out the performance of two multilayer processed double‐heterojunction pHEMTs with different gate width as well as one conventional single‐heterojunction HEMT. Different types of investigation have been undertaken by means of on‐wafer DC, small‐signal, and nonlinear two‐tone measurements. The modeling of the DC output characteristics was successfully accomplished using the FET's Curtice model for all of three tested devices. The main figures of merit for microwave and millimeter wave applications have been determined from scattering parameter measurements and then discussed in detail. Furthermore, to attain a better insight of the device behavior, the nonlinear intermodulation distortion behavior has been also studied and compared for the three devices over different bias conditions. A careful analysis of the DC and RF characteristics over a wide range of working conditions is necessary to ensure adequate transistor operation, depending on the given application of interest.

show abstract

“…This technology also overtures an adequate separation of the application circuit process from the semiconductor active device process; result a reduction in turnabout time [1,2]. The passive elements are reformed from horizontal to vertical plane to generate a miniaturized 3D structure on semi insulating GaAs substrate where pHEMTs being pre-fabricated on the top of it [3]. The active and passive elements are integrated by opening Si 3 N 4 windows of the pre-fabricated pHEMTs thus the sandwiching (metal and dielectric) layers can be reposed to develop multilayer MMICs [4].…”

Section: Introductionmentioning

confidence: 99%

Uniformity investigation of pHEMTs small-signal parameters for pre and post multilayer fabrication in 3D MMICs

Alim

Rezazadeh

2019

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The main aim of this paper is to investigate the uniformity of pHEMTs small-signal parameters before and after multilayer fabrication in 3D MMICs. Seven samples of pre-and post-multilayer fabricated pHEMTs at different representative locations to reflect the degree of consistency. This study deals with the fabrication, measurement, simulation, and comparison of both sample in form of means and slandered deviation. On wafer scattering (S-) parameter measurement has been accomplished to investigate the small signal equivalent circuit parameters up to 50 GHz. The main finding was observed that all parameters are increased after multilayer fabrication except the transconductance and the parasitic inductances. The employment of the 3D-MMIC technology does not induce any evident extinction of the pHEMTs performance utilizing seven different samples of pre-and post-multilayer fabrication.

show abstract

Fabrication and microwave characterisation of multilayer circuits for MMIC applications

Cited by 24 publications

References 12 publications

Quasi-ideal multilayer two- and three-strip directional couplers for monolithic and hybrid MICs

Quasi-ideal multilayer two- and three-strip directional couplers for monolithic and hybrid MICs

Measurement‐based analysis of GaAs HEMT technologies: Multilayer D‐H pseudomorphic HEMT versus conventional S‐H HEMT

Uniformity investigation of pHEMTs small-signal parameters for pre and post multilayer fabrication in 3D MMICs

Contact Info

Product

Resources

About