Fabrication and Microstructual Characteristics of Germanium Spherical Semiconductor Particles by Pulsed Orifice Ejection Method

Masuda, Satoshi; Takagi, Kenta; Kang, Yang Sheng; Kawasaki, Akira

doi:10.2497/jjspm.51.646

Cited by 10 publications

(2 citation statements)

References 13 publications

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“…1) Therefore, several groups have intensely investigated the growth of spherical Si crystals using the drop tube method in which the Si melt was ejected through an orifice of $1 mm and droplets solidified into spheres during free fall. [2][3][4] They, however, suffered from the severe polycrystallinity of spherical samples in which grain boundaries act as carrier recombination sites. This is strongly ascribed to the fact that the droplet experienced large undercooling prior to nucleation owing to the elimination of the crucible wall, one of the main heterogeneous nucleation sites.…”

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confidence: 99%

Spherical Silicon Crystal Formed by Semisolid Process in Drop Tube

Nagashio

Okamoto

Ando

et al. 2006

jjap

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Thus far, spherical Si crystals with $1 mm for solar cells have been grown by ejecting the melt above the melting point in a drop tube. The large undercooling prior to nucleation, however, results in severe polycrystallinity, which retrogrades the energy conversion efficiency. In the present study, we applied the semisolid process to the crystallization of Si droplets, where the melt was ejected with small solid particles formed by iterative cooling and heating of the melt with magnetic stirring at the melting point. The small solid particles that act as a nucleus efficiently suppressed the melt to be undercooled, resulting in an increase in the percentage of the spheres with few grains from 9.6 to 30%.

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Spherical Silicon Crystal Formed by Semisolid Process in Drop Tube

Nagashio

Okamoto

Ando

et al. 2006

jjap

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“…On the other hand, a pulsated orifice ejection method (POEM) allows the preparation of particles with very narrow particle size distribution and very small standard deviation of the mean particle size. So far, several materials with melting points less than 600 K, such as Pb-Sn, Sn-Ag, Bi-Sb have been successfully produced [4][5][6][7]. Recently, Germanium, with the melting point of 1211 K, has also been prepared with this method [8].…”

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confidence: 99%

The Development of Mono-Sized Micro Silicon Particles for Spherical Solar Cells by Pulsated Orifice Ejection Method

Dong¹,

Masuda

Takagi

et al. 2007

MSF

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Mono-sized silicon particles were effectively fabricated by a novel way named pulsated orifice ejection method (POEM). The particles are with very narrow particles size distribution and very small standard deviation of mean particle size. There are two different types spherical silicon particles were found. One consists of many grains mainly in random boundaries. The other consists of two or three grains with only twin orientation relationships, even single crystal in cross-section was also found within this type spherical silicon particles.

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Containerless Crystallization of Semiconductors

Kuribayashi

2012

Solidification of Containerless Undercooled Melts

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Fabrication and Microstructual Characteristics of Germanium Spherical Semiconductor Particles by Pulsed Orifice Ejection Method

Cited by 10 publications

References 13 publications

Spherical Silicon Crystal Formed by Semisolid Process in Drop Tube

Spherical Silicon Crystal Formed by Semisolid Process in Drop Tube

The Development of Mono-Sized Micro Silicon Particles for Spherical Solar Cells by Pulsated Orifice Ejection Method

Containerless Crystallization of Semiconductors

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