2008
DOI: 10.1016/j.jmmm.2008.02.169
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Fabrication and magnetic properties of Ce1Y2Fe5O12 thin films on GGG and SiO2/Si substrates

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Cited by 16 publications
(7 citation statements)
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“…In Ce:GIG film, part of Ce 3+ ion is oxidized to Ce 4+ ion and then precipitate in the form of CeO 2 . The precipitation of CeO 2 would further result in the excess of Fe 3+ ion in film, which finally precipitates as γ‐Fe 2 O 3 impurity phase . In order to inhibit the oxidation of Ce 3+ ion and reduce the stress level of annealed film, a two‐step annealing method that as‐deposited film firstly was annealed at 700°C in nitrogen atmosphere and then annealed at 500°C in air atmosphere was carried out in this article (hereafter expressed as two‐step method).…”
Section: Resultsmentioning
confidence: 89%
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“…In Ce:GIG film, part of Ce 3+ ion is oxidized to Ce 4+ ion and then precipitate in the form of CeO 2 . The precipitation of CeO 2 would further result in the excess of Fe 3+ ion in film, which finally precipitates as γ‐Fe 2 O 3 impurity phase . In order to inhibit the oxidation of Ce 3+ ion and reduce the stress level of annealed film, a two‐step annealing method that as‐deposited film firstly was annealed at 700°C in nitrogen atmosphere and then annealed at 500°C in air atmosphere was carried out in this article (hereafter expressed as two‐step method).…”
Section: Resultsmentioning
confidence: 89%
“…Owing to the transition between Ce 3+ (4 f ) and Fe 3+ (3 d ) tetrahedral states enabled by the charge transfer from Ce 3+ ion to Fe 3+ ion, the magneto‐optical performance of GIG film can be greatly improved by doping Ce 3+ ion into GIG . However, Ce 3+ ion is easily oxidized to Ce 4+ ion which is not helpful for improving the magneto‐optical performance . In view of this, the valence states of Ce in Ce,Ga:GIG films were analyzed by Ce 3 d XPS spectra.…”
Section: Resultsmentioning
confidence: 99%
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