For
the realization of integrated nonreciprocal photonic devices
for optical communication, on-chip monolithic integration of magneto-optical
materials onto silicon remains a challenge. Implemented with pulsed
laser deposition (PLD), a MgO interfacial layer is introduced to overcome
the material incompatibilities between a silicon substrate and magneto-optical
thin films of yttrium iron garnet (YIG). With a thickness of ∼40
nm, the amorphous interfacial layer of MgO can effectively inhibit
interdiffusion across YIG/Si and promote the growth of a high-density,
high-phase-purity polycrystalline garnet structure in the bilayer
of YIG/Ce:YIG. Such modified chemistry and microstructure in YIG/Ce:YIG
lead to enhanced magneto-optical properties, including an ∼38%
increase in Faraday rotation and an ∼15% increase in saturation
magnetization, as well as an ∼20% increase in infrared (IR)
transmission. Offering dual functions of diffusion barrier and structure
template, the MgO layer demonstrated herein suggests a new remedy
solution to heterogeneous interfaces in advanced thin film devices.