High transparent In2O3 and Cr-doped In2O3 (In2−xCrxO3) nanocrystalline thin films were prepared using a simple sol-gel method followed by a spin coating technique. The effect of Cr concentration on the structural, microstructure, electrical and optical properties of In2−xCrxO3 were systematically investigated using X-ray diffractometer (XRD), atomic force microscopy (AFM), UV-vis spectroscopy, field emission scanning electron microscopy (FESEM) and Hall effect technique. The films have good crystallization with preferred orientation to (2 2 2) direction. The lattice parameters, a, of In2O3 system increased at lowest dopants (x = 0.025) and decreased as the dopant was further increased. The optical transmittance of films increased up to 98% for x = 0.05 and decreased for further Cr concentrations. From AFM measurement the films nanocrystals morphology was depending on Cr concentrations. The band gap was around 3.76 eV for pure and with x ⩽ 0.075 however it increased. The effect of Cr concentrations on conducting mechanisms of In2O3 film has been investigated from 80 to 300 K using thermal activated conduction band and hopping models. The films, at x = 0.0-0.075, have typical semiconductor behaviour. Three different conducting mechanisms have been estimated. All thermal activation energies and conduction hopping parameters have been determined and analysed in details.
ErxY3-xFe5O12nanoparticle films (x=0.0, 0.6, 1.2, 2.0, and 2.5) have been synthesized by a sol-gel technique. All of the samples were annealed at 1000°C. The nanostructures were characterized by an X-ray diffractometer (XRD), the magnetic properties and the grain size were studied using a vibrating sample magnetometer (VSM), and a field emission scanning electron microscope (FE-SEM), respectively. The XRD patterns of the films show single phase structure. The sizes of the particles are in the range of 78 to 89 nm. The VSM result shows that the saturation magnetization ofErxY3-xFe5O12films decreased with the increment of Er concentration (x).
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