Fabrication and integration of high performance mixed signal and RF passive components in 0.13/spl mu/m Cu BEOL technologies

Chen, Z.; Lin, K.M.; Kuo, C.C.; Ko, Tai Chuan; Huang, J.C.; Wang, J.P.; Lin, Yang; Wu, Tao; Su, Tzu-Yu; Liao, Chen‐Tuo; Jeng, Min-Chie

doi:10.1109/icsict.2004.1434980

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Low Voltage Triggered Scr (Lvtscr)1

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Cited by 6 publications

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“…The LVTSCR is a well-known ESD protection structure with the low voltage triggering characteristics and the areaefficiency [7], [8]. Generally, SCR devices have much higher ESD robustness than other ESD devices such as diodes and ggNMOS (grounded-gate NMOS) [9]. Accordingly, the ESD clamp which uses this SCR device is relative small size and then makes less parasitic capacitance.…”

Section: Low Voltage Triggered Scr (Lvtscr)mentioning

confidence: 99%

Analysis and modeling of a Low Voltage Triggered SCR ESD protection clamp with the very fast Transmission Line Pulse measurement

Park

Song

Jang

et al. 2010

2010 11th International Symposium on Quality Electronic Design (ISQED)

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The analysis and the modeling of a Low Voltage Triggered SCR (Silicon Controlled Rectifier) under vf-TLP (very-fast Transmission Line Pulse) measurements are reported. The results measured by vf-TLP system showed that the triggering voltage (Vt1) decreased and the second breakdown current (It2) increased in the comparison with the results measured by a standard 100ns TLP (Transmission Line Pulse) system. A compact model based on the vf-TLP measured characteristics is presented. The measurement result and the simulation data of the behavior approached model indicate a good correlation.

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Section: Low Voltage Triggered Scr (Lvtscr)mentioning

confidence: 99%