Fabrication and Characterization of Planarized Carbon Nanotube Via Interconnects

Katagiri, Masayuki; Wada, Makoto; Ito, Ban; Yamazaki, Yoichi; Suzuki, Mariko; Kitamura, Masayuki; Saito, Tatsuro; Isobayashi, Atsunobu; Sakata, A.; Sakuma, Naoko; Kajita, Akihiro; Sakai, Tadashi

doi:10.7567/jjap.51.05ed02

Cited by 9 publications

(8 citation statements)

References 18 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…At present, several researchers have fabricated vertical CNT bundles and committed to their integration into devices [4,[27][28][29][30]. A four-terminal Kelvin structure was applied to measure the current-voltage characteristics of the CNT via interconnects and the whole resistance was 92 kΩ as shown by Katagiri et al [27]. The study has also attested that the contact resistance is higher than the CNT conducting resistance in the whole CNT path through measurement and calculation.…”

Section: Contact Resistance Of Cnt Bundlesmentioning

confidence: 98%

“…When acting as interconnects, CNTs have the same functions as the traditional cooper material and produce a lower resistance in parallel connections than in serial connections, particularly in the case of CNT bundles. At present, several researchers have fabricated vertical CNT bundles and committed to their integration into devices [4,[27][28][29][30]. A four-terminal Kelvin structure was applied to measure the current-voltage characteristics of the CNT via interconnects and the whole resistance was 92 kΩ as shown by Katagiri et al [27].…”

Section: Contact Resistance Of Cnt Bundlesmentioning

confidence: 99%

“…Katagiri et al. [27] applied dilute hydrofluoric (HF) acid treatment after CMP, and the whole resistance of planarized CNT via interconnects with 160-nm-diameter was reduced to 3.8 kΩ. Then the thermal annealing was performed at 450℃ and the resistance decreased further to 1.5 kΩ.…”

Section: Thermal Annealingmentioning

confidence: 99%

“…Various techniques for reducing contact resistance are summarized in Table 2. Thermal annealing combined with HF treatment 1.5 kΩ [27] Electric current flowing DC current flow through electrodes 15-50 kΩ [55] Electrical pulse flow through electrodes 66 kΩ [57] Radio frequency induction heating 15-30 kΩ [59] Electron beam irradiation Electron beam exposed to the contact area 30 kΩ [21] Selective electron irradiation under DC condition <250 kΩ [60] Elimination of contamination HF treatment combined with CMP and thermal annealing 85 Ω (total resistance) [29] Ultrasonic bonding Ultrasonic bonding 8-24 kΩ/μm [62] Hydrocarbon deposition Electron beam induced deposition of hydrocarbon molecules ≈ 550 kΩ [65] Carbon deposition Carbon molecule deposition [44] Modest pressure Pressure on CNT-metal contact area 121 kΩ [69] Pressure on CNT tangles 100 kΩ [70]…”

Section: Dopingmentioning

confidence: 99%

See 3 more Smart Citations

On Contact Resistance of Carbon Nanotubes

An¹,

Yang²,

Chang³

2013

IJTAN

View full text Add to dashboard Cite

Carbon nanotubes (CNTs) have found many potential applications stemming from their small dimensions and marvellous electronic, mechanical, and thermal properties. One of the barriers for using CNTs as building blocks in nanoelectronics is the high contact resistance. This paper reviews recent progress on the research of contact resistance of CNTs. It starts with a preview of two basic contact configurations, i.e., side contact and end contact, and measurements of contact resistance. The formation of Schottky barrier on a typical metal-semiconductor contact is then presented, aiming at looking for ways to reduce contact resistance from a theoretical point of view. The current techniques for improving CNT contact resistance are classified and summarized as well. The principles and applicabilities of these techniques are compared and discussed. A deep understanding of the forming mechanisms and improvement methods of contact resistance is critical in order to bring CNT-based devices from laboratory to the real-world technology.

show abstract

Section: Contact Resistance Of Cnt Bundlesmentioning

confidence: 98%

Section: Contact Resistance Of Cnt Bundlesmentioning

confidence: 99%

Section: Thermal Annealingmentioning

confidence: 99%

Section: Dopingmentioning

confidence: 99%

See 2 more Smart Citations

On Contact Resistance of Carbon Nanotubes

An¹,

Yang²,

Chang³

2013

IJTAN

View full text Add to dashboard Cite

show abstract

“…[1][2][3] VACNTs have been widely studied because of their potential in many electronic applications such as field-emission devices, gas and biological sensors, thermal interface materials, and supercapacitors. [4][5][6][7][8][9][10][11][12] Chemical vapor deposition (CVD) is a common method for the synthesis of VACNTs, where CNTs can be grown in the presence of metal catalysts via thermal decomposition of hydrocarbon gases such as methane, 13,14) ethylene, 15,16) and acetylene. 17) Alcohols such as ethanol and methanol also work as CVD precursors for CNT growth.…”

mentioning

confidence: 99%

Density measurement for carbon nanotube film grown on flat substrates

Omote

Hirose

Imayama

et al. 2019

Appl. Phys. Express

View full text Add to dashboard Cite

An X-ray absorption method for measuring the density of vertically aligned carbon nanotube film grown on a flat substrate is proposed. X-rays can penetrate the film parallel to the surface direction, and the transmitted X-rays are detected by an X-ray camera, which enables the film, substrate, and air regions to be distinguished in the observed X-ray image. When the sample surface is aligned just parallel to the penetrating direction of the X-rays, the transmittance of the film can be observed. The film density is calculated from the observed transmittance if the elemental composition of the film material is known.

show abstract

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

Ahmad

Anguita

Stolojan

et al. 2015

Adv Funct Materials

View full text Add to dashboard Cite

Keywords: nanomaterials, carbon nanotubes, photothermal chemical vapor deposition, low temperature growth 2 For carbon nanotubes (CNTs) to be exploited in electronic applications the growth of high quality material on conductive substrates at low temperatures (< 450 o C) is required. CNT quality is known to be strongly degraded when growth is conducted on metallic surface at low temperatures using conventional chemical vapor deposition (CVD). Here, we demonstrate production of high quality vertically-aligned CNTs at low substrate temperatures (350 -440 o C) on conductive TiN thin film using photo-thermal CVD by confining the heat required for growth to just the catalyst using an array of optical lamps and by optimizing the thickness of the TiN under-layer. The thickness of the TiN plays a crucial role in determining various properties including diameter, material quality, number of shells and metallicity. The highest structural quality with a visible Raman D-to G-band intensity ratio as low as 0.13 is achieved for 100 nm TiN thickness grown at 420 o C; a record low value for low temperature CVD grown CNTs. Electrical measurements of high density CNT arrays show the resistivity to be 1.25×10 -2 Ωcm represents some of the lowest values reported. Finally, the broader aspects of using this approach as a scalable technology for carbon nanomaterial production are also discussed.3

show abstract

Fabrication and Characterization of Planarized Carbon Nanotube Via Interconnects

Cited by 9 publications

References 18 publications

On Contact Resistance of Carbon Nanotubes

On Contact Resistance of Carbon Nanotubes

Density measurement for carbon nanotube film grown on flat substrates

High Quality Carbon Nanotubes on Conductive Substrates Grown at Low Temperatures

Contact Info

Product

Resources

About