Fabrication and Characterization of Photosensitive n-CdO/p-InSe Heterojunctions

Abstract

Photosensitive n-CdO/p-InSe heterojunctions were developed and studied for the rst time. The heterojunctions were fabricated by dc reactive magnetron sputtering of CdO thin lms onto the freshly cleaved p-InSe single-crystal substrates (0 0 1). Surface morphology of the obtained lms was studied by means of atomic force microscopy. From the X-ray diraction result it is shown that the CdO lm is polycrystalline with cubic structure. The mechanisms of current transport through the space-charge region under forward and back biases were established by investigation of temperature dependences of the IV characteristics. The main photoelectric parameters and the photosensitivity spectra were measured at room temperature.

Fabrication and characterization of photosensitive n-ZnO/p-InSe heterojunctions

“…Zinc oxide (ZnO) and indium monoselenide (InSe) layered crystals are the semiconductors which are of great interest from the point of view of heterojunction fabrication [1][2][3][4]. With a band gap of 1.25 eV, InSe is a promising material for the solar cell technology [5][6][7][8][9].…”

Highly-mismatched InAs/InSe heterojunction diodes

“…Its high electron mobility (up to 10 3 cm 2 V À1 s À1 at 300 K), 8 p-or n-type doping, 9 tunable band gap from the NIR (E g ¼ 1.26 eV at 300 K) to the visible (VIS) range, 10 as well as chemical stability in air, 11 represent attractive features for versatile band engineering and reliable devices for electronics and optoelectronics. Recent reports have demonstrated optical devices based on heterostructure stacks of InSe and other vdW crystals (e.g., GaSe, graphene, and CuInSe 2 ) 9,12,13 or oxides (e.g., CdO, and ZnO), 14,15 and p-n junctions based on surface functionalization of n-InSe. 16 Here, we report on a heterojunction that combines the NIR p-InSe with the MIR n-InAs.…”