Coaxial quantum wells (QWs) are ideal candidates for nanowire (NW) lasers, providing strong carrier confinement and allowing close matching of the cavity mode and gain medium. We report a detailed structural and optical study and the observation of lasing for a mixed group-V GaAsP NW with GaAs QWs. This system offers a number of potential advantages in comparison to previously studied common group-V structures (e.g., AlGaAs/GaAs) including highly strained binary GaAs QWs, the absence of a lower band gap core region, and deep carrier potential wells. Despite the large lattice mismatch (∼1.7%), it is possible to grow defect-free GaAs coaxial QWs with high optical quality. The large band gap difference results in strong carrier confinement, and the ability to apply a high degree of compressive strain to the GaAs QWs is also expected to be beneficial for laser performance. For a non-fully optimized structure containing three QWs, we achieve low-temperature lasing with a low external (internal) threshold of 20 (0.9) μJ/cm2/pulse. In addition, a very narrow lasing line width of ∼0.15 nm is observed. These results extend the NW laser structure to coaxial III–V–V QWs, which are highly suitable as the platform for NW emitters.

This review presents an overview of the recent developments and achievements in the field of nonlinear microwave physics and applications of high temperature superconducting (HTS) thin films. It touches upon such issues as power-dependent surface impedance Z s , harmonic generation and intermodulation distortion. Various possible sources of the nonlinearity including grain boundaries, patterning, impurity doping, oxygen content and microwave heating are analysed and surveyed. Correlative studies of microstructural, microwave and other electromagnetic properties, as well as techniques of artificial modification of HTS films with the aim to improve their microwave performance, are reviewed. Possible perspectives for near future development of the nonlinear microwave science and application of HTS films are also discussed.

Axially stacked quantum dots (QDs) in nanowires (NWs) have important applications in nanoscale quantum devices and lasers. However, there is lack of study of defect-free growth and structure optimization using the Au-free growth mode. We report a detailed study of self-catalyzed GaAsP NWs containing defect-free axial GaAs QDs (NWQDs). Sharp interfaces (1.8–3.6 nm) allow closely stack QDs with very similar structural properties. High structural quality is maintained when up to 50 GaAs QDs are placed in a single NW. The QDs maintain an emission line width of <10 meV at 140 K (comparable to the best III–V QDs, including nitrides) after having been stored in an ambient atmosphere for over 6 months and exhibit deep carrier confinement (∼90 meV) and the largest reported exciton–biexciton splitting (∼11 meV) for non-nitride III–V NWQDs. Our study provides a solid foundation to build high-performance axially stacked NWQD devices that are compatible with CMOS technologies.

A study of ultra-low-noise MoCu transition edge sensors (TESs) has been performed in the context of realizing the highly sensitive far infrared imaging arrays needed for the next generation of space telescopes. More than 50 TESs, on four different chips, cut out of two different wafers were characterized. The TESs were in the form of 16-element arrays and were read out using superconducting quantum interference device (SQUID) time division multiplexing. The devices were fabricated on 200-nm-thick silicon nitride membranes, with leg widths and lengths covering the ranges of 1–4 μm and 160–960 μm, respectively. The apparent critical temperatures varied over 110–127 mK, but it is shown that much of the variation was due to differential loading by stray light, amounting to 2 ± 2 fW across the array. The measured thermal conductances to the heat bath spanned the range 0.12–1.1 pW/K, with the lowest values being typical of those needed for ultra-low-noise operation. We also studied the inherent variation in the conductances of 15 nominally identical TESs on the same chip and found a value of ±10%, which is higher than that seen on our high-conductance devices designed for ground-based operation. We measured and modeled the electrical input impedance of a subset of these TESs, and studied their step responses. The models, based on previously determined material parameters, are in excellent agreement with the measurements. Dark noise spectra were recorded and compared with the same electrothermal models using the same parameters as the dynamical simulations. The measured noise is reasonably well described by the sum of the contributions from phonon noise in the legs, Johnson noise in the bilayer, and SQUID readout noise. Dark noise equivalent powers as low as 4.2 × 10−19 W/Hz were measured. The NEP was higher than the theoretical limit by a factor of about 1.6.

We have investigated the nonlinear surface impedance and two-tone intermodulation distortion of ten epitaxial YBa 2 Cu 3 O 7-δ films on MgO substrates, using stripline resonators, at frequencies