Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Zhang, Yunyan; Velichko, A. V.; Fonseka, H. Aruni; Parkinson, Patrick; Gott, James A.; Davis, George; Aagesen, Martin; Sanchez, Ana M.; Mowbray, D. J.; Liu, Huiyun

doi:10.1021/acs.nanolett.1c01461

Cited by 21 publications

(33 citation statements)

References 67 publications

(125 reference statements)

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“…Semiconductor NWs, particularly III-V NWs, are widely considered fundamental building blocks for nanoscience and nanotechnology and useful for applications in nanoelectronics and nanophotonics [1][2][3][4][5]. Very efficient elastic stress relaxation on strain-free NW side facets allows for dislocation-free growth in material systems with high lattice mismatch [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Theory of MBE Growth of Nanowires on Reflecting Substrates

Dubrovskiı̆

2022

Nanomaterials

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Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group III atoms impinging NWs is presented, which accounts for specular re-emission from the mask surface and the shadowing effect in the absence of surface diffusion from the substrate. An expression is given for the shadowing length of NWs corresponding to the full shadowing of the mask. Axial and radial NW growths are considered in different stages, including the stage of purely axial growth, intermediate stage with radial growth, and asymptotic stage, where the NWs receive the maximum flux determined by the array pitch. The model provides good fits with the data obtained for different vapor–liquid–solid and catalyst-free III-V NWs.

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Section: Introductionmentioning

confidence: 99%

Theory of MBE Growth of Nanowires on Reflecting Substrates

Dubrovskiı̆

2022

Nanomaterials

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“…It needs to be mentioned that the SL growth in NWs will need a large change in growth fluxes and hence the growth environment, which can lead to the generation of stacking faults. A carefully balanced growth environment will be needed in the DBR growth [48]. This research provides useful information for the design of high-quality vertically-standing NW lasers onto Si platform, which can be widely used in the integrated circuits.…”

Section: Discussionmentioning

confidence: 99%

Design of high-quality reflectors for vertical III–V nanowire lasers on Si

Zhang

Yang²,

Zhang³

et al. 2021

Nanotechnology

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Nanowires (NWs) with a unique one-dimensional structure can monolithically integrate highquality III-V semiconductors onto Si platform, which is highly promising to build lasers for Si photonics. However, the lasing from vertically-standing NWs on silicon is much more difficult to achieve compared with NWs broken off from substrates, causing significant challenges in the integration. Here, the challenge of achieving vertically-standing NW lasers is systematically analysed with III-V materials, e.g. GaAs(P) and InAs(P). The poor optical reflectivity at the NW/Si interface results severe optical field leakage to the substrate, and the commonly used SiO 2 or Si 2 N 3 dielectric mask at the interface can only improve it to ~10%, which is the major obstacle for achieving low-threshold lasing. A NW super lattice distributed Bragg reflector is therefore proposed, which is able to greatly improve the reflectivity to >97%. This study provides a highly-feasible method to greatly improve the performance of vertically-standing NW lasers, which can boost the rapid development of Si photonics.

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“…The nanowire behaves as a cavity/waveguide that enhances the extraction efficiency of the emitters [504] . Moreoever, narrow linewidths have been demonstrated at temperatures as high as 140K [505] . g (2) (0) values <0.005 have been demonstrated for InAsP QDs in InP NWs [506] .…”

Section: Iii-v Epitaxial Qdsmentioning

confidence: 99%

Nanomaterials for Quantum Information Science and Engineering

et al. 2022

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Quantum information science and engineering (QISE) which entails generation, control and manipulation of individual quantum mechanical states together with nanotechnology have dominated condensed matter physics and materials science research in the 21st century. Solid state devices for QISE have, to this point, predominantly been designed with bulk material as their constituents. In this review, we consider how nanomaterials or low-dimensional materials i.e. materials with intrinsic quantum confinement -may offer inherent advantages over conventional materials for QISE. We identify the materials challenges for specific types of qubits, and we identify how emerging nanomaterials may overcome these challenges. Challenges for and progress towards nanomaterials-based quantum devices are identified. We aim to help close the gap between the nanotechnology and quantum information communities and inspire research that will lead to next-generation quantum devices for scalable and practical quantum applications.

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Defect-Free Axially Stacked GaAs/GaAsP Nanowire Quantum Dots with Strong Carrier Confinement

Cited by 21 publications

References 67 publications

Theory of MBE Growth of Nanowires on Reflecting Substrates

Theory of MBE Growth of Nanowires on Reflecting Substrates

Design of high-quality reflectors for vertical III–V nanowire lasers on Si

Nanomaterials for Quantum Information Science and Engineering

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