Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

Tran, Binh Tinh; Chang, Edward Yi; Trinh, Hai Dang; Lee, Ching-Ting; Sahoo, Kartika Chandra; Lin, Kung Liang; Huang, Man Chi; Yu, Hung Wei; Luong, Tien Tung; Chung, Ching-Che; Nguyen, Chi Lang

doi:10.1016/j.solmat.2012.03.030

Cited by 37 publications

(22 citation statements)

References 14 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Utilizing a similar growth approach, 1J n-In 0.4 Ga 0.6 N/p-Si heterostructure solar cell with enhanced J sc was demonstrated, attributed to the use of indium tin oxide as the top n-type contact (Tran et al 2012). A conversion efficiency of 7.12% under AM1.5g (Tran et al 2012) was achieved, indicating a promising start for InGaN solar cells on Si substrate.…”

Section: Lattice-mismatched Ingan-on-simentioning

confidence: 93%

“…More recently, approaches involving metamorphic graded buffers such as GaAsP and SiGe have gained a lot of attention for III-V/Si tandem solar cells (Grassman, Carlin, and Ringel 2010;Dimroth et al 2014;Diaz et al 2014;Yaung, Lang, and Lee 2014). Additional heteroepitaxial integration approaches, which in comparison to the previously mentioned techniques have been less extensively explored, include -(i) lattice-matched dilute nitride (GaAsPN) solar cells on Si substrate (Geisz et al 2005;Almosni et al 2013;Yamane et al 2014) and (ii) lattice-mismatched InGaN based solar cells (Ager et al 2008;Brown et al 2010;Tran et al 2012) on Si substrate. The most critical challenges associated with heteroepitaxial integration of III-V materials on Si substrate are highlighted as follows:…”

Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

“…Such defects and dislocations have a detrimental impact on the minority carrier lifetime and hence the solar cell performance. The most noteworthy techniques which have been employed for direct GaAs epitaxy on Si to reduce the threading dislocation density (TDD) include (i) the thermal-cycle annealing (TCA) (Yamaguchi, Nishioka, and Sugo 1989;Yamaguchi 1991) and (ii) the low temperature and low growth rate process during the initial GaAs nucleation on Si (Vernon et al 1986;Tran et al 2012;Yamaguchi, Nishioka, and Sugo 1989;Yamaguchi 1991;Bolkhovityanov and Pchelyakov 2008). Growing thicker GaAs buffers has also been shown to facilitate dislocation reduction (Vernon et al 1986) but adds to the overall cost and time of the epitaxial process.…”

Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

“…More recently, Tran et al (2012) demonstrated good quality In 0.4 Ga 0.6 N films grown on GaN/AlN/Si(111) substrate with negligible phase separation using high-low-high-temperature AlNbuffer layers by MOCVD. Utilizing a similar growth approach, 1J n-In 0.4 Ga 0.6 N/p-Si heterostructure solar cell with enhanced J sc was demonstrated, attributed to the use of indium tin oxide as the top n-type contact (Tran et al 2012). A conversion efficiency of 7.12% under AM1.5g (Tran et al 2012) was achieved, indicating a promising start for InGaN solar cells on Si substrate.…”

Section: Lattice-mismatched Ingan-on-simentioning

confidence: 99%

See 3 more Smart Citations

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

View full text Add to dashboard Cite

Achieving high-efficiency solar cells and at the same time driving down the cell cost has been among the key objectives for photovoltaic researchers to attain a lower levelized cost of energy (LCOE). While the performance of silicon (Si) based solar cells have almost saturated at an efficiency of~25%, III-V compound semiconductor based solar cells have steadily shown performance improvement at~1% (absolute) increase per year, with a recent record efficiency of 44.7%. Integration of such high-efficiency III-V multijunction solar cells on significantly cheaper and large area Si substrate has recently attracted immense interest to address the future LCOE roadmaps by unifying the high-efficiency merits of III-V materials with low-cost and abundance of Si. This review article will discuss the current progress in the development of III-V multijunction solar cell integration onto Si substrate. The current state-of-the-art for III-Von-Si solar cells along with their theoretical performance projections is presented. Next, the key design criteria and the technical challenges associated with the integration of III-V multijunction solar cells on Si are reviewed. Different technological routes for integrating III-V solar cells on Si substrate through heteroepitaxial integration and via mechanical stacking approach are presented. The key merits and technical challenges for all of the till-date available technologies are summarized. Finally, the prospects, opportunities and future outlook toward further advancing the performance of III-V-on-Si multijunction solar cells are discussed. With the plummeting price of Si solar cells accompanied with the tremendous headroom available for improving the III-V solar cell efficiencies, the future prospects for successful integration of III-V solar cell technology onto Si substrate look very promising to unlock an era of next generation of high-efficiency and low-cost photovoltaics.

show abstract

Section: Lattice-mismatched Ingan-on-simentioning

confidence: 93%

Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

Section: Heteroepitaxial Approach For Iii-v-on-si Integrationmentioning

confidence: 99%

Section: Lattice-mismatched Ingan-on-simentioning

confidence: 99%

See 2 more Smart Citations

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Jain

Hudait

2014

Energy Harvesting and Systems

View full text Add to dashboard Cite

show abstract

“…Among these materials, gallium nitride (GaN) has been considered as a promising candidate for thin film heterojunctions (as antireflective coating, window material, transparent emitter and back surface field material in PIN structures) and tandem solar cells due to its wide band gap (3.4 eV at 300 K), good stability at high temperature, excellent thermal conductivity and the possibility of obtaining high quality thin films with n or p type conductivity (since it is easily doped with silicon or magnesium for n or p type materials, respectively) [1,2,3,4]. GaN, generally crystallizing in the wurtzite structure (lattice constants: a = 3.189 Å, c = 5.186 Å), is a very attractive material for applications in optoelectronic devices because it has a direct band gap and it is easy to control its carrier concentration and conductivity type [5,6].…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

et al. 2013

View full text Add to dashboard Cite

Photoluminescence (PL) studies in GaN thin films grown by infrared close space vapor transport (CSVT-IR) in vacuum are presented in this work. The growth of GaN thin films was done on a variety of substrates like silicon, sapphire and fused silica. Room temperature PL spectra of all the GaN films show near band-edge emission (NBE) and a broad blue and green luminescence (BL, GL), which can be seen with the naked eye in a bright room. The sample grown by infrared CSVT on the silicon substrate shows several emission peaks from 2.4 to 3.22 eV with a pronounced red shift with respect to the band gap energy. The sample grown on sapphire shows strong and broad ultraviolet emission peaks (UVL) centered at 3.19 eV and it exhibits a red shift of NBE. The PL spectrum of GaN films deposited on fused silica exhibited a unique and strong blue-green emission peak centered at 2.38 eV. The presence of yellow and green luminescence in all samples is related to native defects in the structure such as dislocations in GaN and/or the presence of amorphous phases. We analyze the material quality that can be obtained by CSVT-IR in vacuum, which is a high yield technique with simple equipment set-up, in terms of the PL results obtained in each case.

show abstract

Efficiency improvement for InGaN/GaN multiple-quantum-well solar cells with vertical configuration

et al. 2016

View full text Add to dashboard Cite

Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

Cited by 37 publications

References 14 publications

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

III–V Multijunction Solar Cell Integration with Silicon: Present Status, Challenges and Future Outlook

Photoluminescence Study of Gallium Nitride Thin Films Obtained by Infrared Close Space Vapor Transport

Efficiency improvement for InGaN/GaN multiple-quantum-well solar cells with vertical configuration

Contact Info

Product

Resources

About