Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films

Lam, Ka Se; Chan, Ka‐Hou; Ng, Sheung Mei; Wong, Hon Fai; Liu, Yu Kuai; Leung, Chun Wah; Mak, Chee Leung

doi:10.1002/pssa.201800660

Cited by 4 publications

(3 citation statements)

References 17 publications

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“…Second, all loops of BFO films are asymmetric under the negative and positive electric field, and shift largely into the positive side. In general, it can be attributed to the asymmetric top and bottom electrodes in ferroelectric capacitor which have different carrier concentrations, work functions, and electron affinities 49,50 . In addition, the internal field is built through the imprint process caused by the trapped charges, charged defects, and other possible defect dipole complexes 51 associated with the defects mentioned in the above defect reactions ()–().…”

Section: Resultsmentioning

confidence: 99%

(001)‐oriented BiFeO₃ films integrated on Si with enhanced electrical performances

Zhang

et al. 2021

J Am Ceram Soc.

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Highly (001)‐oriented pure‐phase BFO films were prepared on traditional Si substrates via radio frequency magnetron sputtering (RFMS). The crystallinity of the films is found to be increased, that is, higher degree of (001) texture, larger grain size, less grain boundary, denser surface morphology, and better thickness uniformity, with increased film thickness. These factors have significant influences on the electrical properties of BFO films, that is, dielectric response, as well as ferroelectric polarization and leakage current characteristics. The 240‐nm‐thick film exhibits relatively poor electrical properties compared with other three thicker films, which is mainly due to its small grain, the enhancement of the clamping effect of neighboring grains, and the absence of domain walls. The essential roles of the evolution and distribution of grains/domains and defect charges in leakage mechanism and ferroelectric switching polarization were also investigated systematically. It was found that 600‐nm‐thick BFO film has the lowest leakage current density (as low as 1.8 × 10−6 A / cm2 @ 90 kV/cm) and followed a mixed SE or SCLC conduction behavior, while the leakage behavior in other films is dominated by SE and P‐F currents. All (001)‐BFO films have a giant electrical polarization which is solely originated from the contribution of ferroelectric domain switching, and it has lower switching voltage and faster switching rate in thicker films.

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Section: Resultsmentioning

confidence: 99%

(001)‐oriented BiFeO₃ films integrated on Si with enhanced electrical performances

Zhang

et al. 2021

J Am Ceram Soc.

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“…Polycrystalline growth -fast heating rate An SBN thin film, which has a large range of application possibilities (Lukasiewicz et al, 2008), was annealed with the highest heating rate (20 C s À1 ) possible for the setup. Physical vapor deposition and CSD of SBN on MgO or STO substrates have been reported because of the small lattice mismatch that could favor epitaxial growth (Infortuna et al, 2006;Boulay et al, 2007;Lam et al, 2018;Shirokov et al, 2018). Here, a singlecrystalline STO (100)-oriented substrate was used with a single deposited layer of SBN with Sr:Ba = 40:60.…”

Section: Data Measurement and Treatmentmentioning

confidence: 99%

Experimental setup for high-temperature in situ studies of crystallization of thin films with atmosphere control

Blichfeld¹,

Bakken²,

Chernyshov³

et al. 2020

J Synchrotron Radiat

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Understanding the crystallization process for chemical solution deposition (CSD) processed thin films is key in designing the fabrication strategy for obtaining high-quality devices. Here, an in situ sample environment is presented for studying the crystallization of CSD processed thin films under typical processing parameters using near-grazing-incidence synchrotron X-ray diffraction. Typically, the pyrolysis is performed in a rapid thermal processing (RTP) unit, where high heating rates, high temperatures and atmosphere control are the main control parameters. The presented in situ setup can reach heating rates of 20°C s−1 and sample surface temperatures of 1000°C, comparable with commercial RTP units. Three examples for lead-free ferroelectric thin films are presented to show the potential of the new experimental set-up: high temperature, for crystallization of highly textured Sr0.4Ba0.6Nb2O6 on a SrTiO3 (001) substrate, high heating rate, revealing polycrystalline BaTiO3, and atmosphere control with 25% CO2, for crystallization of BaTiO3. The signal is sufficient to study a single deposited layer (≥10 nm for the crystallized film) which then defines the interface between the substrate and thin film for the following layers. A protocol for processing the data is developed to account for a thermal shift of the entire setup, including the sample, to allow extraction of maximum information from the refinement, e.g. texture. The simplicity of the sample environment allows for the future development of even more advanced measurements during thin-film processing under non-ambient conditions.

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“…По полученным данным определены параметры элементарной ячейки c 10×5 = 0.3969(1) nm и c 25+25 = 0.3961(1) nm. Величина изменения параметра элементарной ячейки за счет уменьшения толщины слоя сравнима с аналогичной величиной за счет влияния допирования SBN-50 4% Gd [10]. Сравнивая полученные параметры элементарных ячеек с параметрами для объемного материала (a bulk = 1.2472 nm, c bulk = 0.3940 nm), можно рассчитать деформацию элементарной ячейки ε 10×5 = (c f ilm − c bulk )/c bulk = 0.007, а ε 25+25 = 0.005.…”

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Деформация Элементарной Ячейки При Прерывистом Напылении Пленок Ниобата Бария-Стронция

Стрюков¹,

Павленко²

2019

Письма В Журнал Технической Физики

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Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films

Cited by 4 publications

References 17 publications

(001)‐oriented BiFeO₃ films integrated on Si with enhanced electrical performances

(001)‐oriented BiFeO₃ films integrated on Si with enhanced electrical performances

Experimental setup for high-temperature in situ studies of crystallization of thin films with atmosphere control

Деформация Элементарной Ячейки При Прерывистом Напылении Пленок Ниобата Бария-Стронция

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Fabrication and Characterization of Epitaxial Gd‐Doped SBN Thin Films

Cited by 4 publications

References 17 publications

(001)‐oriented BiFeO3 films integrated on Si with enhanced electrical performances

(001)‐oriented BiFeO3 films integrated on Si with enhanced electrical performances

Experimental setup for high-temperature in situ studies of crystallization of thin films with atmosphere control

Деформация Элементарной Ячейки При Прерывистом Напылении Пленок Ниобата Бария-Стронция

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(001)‐oriented BiFeO₃ films integrated on Si with enhanced electrical performances

(001)‐oriented BiFeO₃ films integrated on Si with enhanced electrical performances