Fabrication and characterization of 4H-SiC planar MESFETs

Na, Hoon Joo; Moon, Jeong Hyun; Yim, Jeong Hyuk; Lee, Jae Bin; Kim, Hyeong Joon

doi:10.1016/j.mee.2005.10.043

Cited by 42 publications

(15 citation statements)

References 7 publications

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“…The bias conditions of Vgs = -15 V and the frequency of 2 GHz were considered in our simulation. It should be noted that the simulated Cgd are in good agreement with the experimental results measured at the same Vd, [12]. with and without source field plate As compared to the conventional structures without field plate, the MESFETs with source field plate show an approximately 410% decrease in Cgd at VdS = 40 V, which is responsible for the 2.2 dB MSG/MAG improvement.…”

Section: Detailed Text Formattingsupporting

confidence: 79%

“…DC Characteristics Fig. 2 shows the simulated and experimental drain currentvoltage (Ids-VdS) characteristics under the gate bias (Vgs) varied from -4 to -19 V in a step of -5 V. It should be noted that the simulated results of the conventional MESFET without field plate are in good agreement with the experimental data [12]. As is seen from the figure, Ids of the proposed structure with the 1.l,m long source field plate is almost the same as that of the conventional structure at various Vgs.…”

Section: Detailed Text Formattingmentioning

confidence: 63%

“…Values for the parasitic elements for the equivalent circuit were extracted using the Dambrine method [13]. 5 demonstrates bias dependence of gate-to-drain capacitance (Cgd) and MSG/MAG extracted from Sparameters, along with the experimental data published in [12]. The bias conditions of Vgs = -15 V and the frequency of 2 GHz were considered in our simulation.…”

Section: Detailed Text Formattingmentioning

confidence: 99%

See 2 more Smart Citations

High Performance 4H-SiC MESFETs with a Source Field Plated Structure

Deng

Zhang

et al. 2007

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST)

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A new structure of 4H-SiC MESFET based on the source field plate technology is proposed in this paper. The source field plate has been applied not only to improve the breakdown voltage, but also to eliminate the drawback of low gain characteristics relatively resulted from additional feedback capacitance associated with the field plate electrode. The off-state breakdown voltage was significantly improved by employing source field plate electrode, and the highest of 203V was obtained. As compared to the conventional structures, the MESFETs with source field plate show an approximately 41% decrease in gateto-drain capacitance, which is responsible for the 2.2dB gain improvement at 2GHz. Therefore, the 4H-SiC MESFETs with source field plate have superior DC and RF performances compared to the similar devices based on the conventional structure.

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Section: Detailed Text Formattingsupporting

confidence: 79%

Section: Detailed Text Formattingmentioning

confidence: 63%

Section: Detailed Text Formattingmentioning

confidence: 99%

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High Performance 4H-SiC MESFETs with a Source Field Plated Structure

Deng

Zhang

et al. 2007

2007 International Workshop on Electron Devices and Semiconductor Technology (EDST)

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“…The simulated and experimental [8] data of dc drain current-voltage (I DS vs. V DS ) are depicted in Fig2. The gate bias voltage varied from -4V to -19V in a step of -5V.…”

Section: A DC Characteristicsmentioning

confidence: 99%

Improved characteristics of 4H-SiC MESFETs with partly p-type doped space layer

Huang

et al. 2009

2009 3rd IEEE International Symposium on Microwave, Antenna, Propagation and EMC Technologies for Wireless Communications

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4H-SiC MESFET with partly p-type doped space layer is proposed and the DC and RF characteristics are analyzed in this paper by 2D numerical simulation. The simulated results show that the breakdown voltage is about 56% larger than that of the conventional structure, and the saturated drain current obtained 4.4% enhancement too. The calculated maximum output power density at operation point V GS =-10V, V DS =40V are 10.8W/mm and 6.2W/mm respectively for 4H-SiC MESFETs with the proposed structure and conventional structure. As compared with the conventional structure, RF simulation results show that the MESFETs with partly p-type doped space layer have a 2.7dB gain improvement at 2GHz.

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“…The CG-MESFET has a clival gate instead of the conventional gate, and the manufacturing processes of substrate, p-buffer and channel are same as conventional 4H-SiC MESFET [9]. So, the key process is manufacturing the clival gate in the channel, which can take the example of fabricating the recessed gate area of the transistors as reported in [10]. Firstly, with electronic beam lithography and etching on the channel region between the gate and source, the gate region length will be defined.…”

Section: Introductionmentioning

confidence: 99%