High Performance 4H-SiC MESFETs with a Source Field Plated Structure

Deng, Xiaochuan; Zhang, Chao; Li, Zhaoji; Cheng, Zhuangliang

doi:10.1109/edst.2007.4289782

Cited by 4 publications

(1 citation statement)

References 13 publications

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“…It has allowed to enhance the breakdown voltage in AlGaN/GaN HEMTs [3], [4], to reduce the current collapse phenomena, resulting in a better on-resistance [5], and to increase the maximum available gain, lowering the drainto -gate feedback parasitic capacitance (C gd ) in MESFETs [6].…”

Section: Introductionmentioning

confidence: 99%

Improved phase linearity in source field plate AlGaN/GaN HEMTs

Colantonio¹,

Giannini²,

Giofre³

et al. 2014

2014 44th European Microwave Conference

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The benefits of using source field plate (FPS) in AlGaN/GaN HEMTs to reduce the phase distortion in efficient power amplifiers (PAs) is demonstrated in this contribution. The link between phase distortion of a PA and the drain -togate feedback parasitic capacitance of the transistor is shown. This link leads to critical phase nonlinearity expecially when architectures based on output load modulation, as the Doherty topology, are adopted. The FPS effect in reducing the feedback parasitic capacitance and, thus, the AM/PM distortion of the PA is verified. For experimental validation two AlGaN/GaN HEMT structures, with and without FPS, are realized and compared in order to extract the effects of FPS. Source-load pull characterizations are performed on both structures in order to verify the benefits of FPS on phase distortion, both in fixed and modulated output load conditions.

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Section: Introductionmentioning

confidence: 99%

Improved phase linearity in source field plate AlGaN/GaN HEMTs

Colantonio¹,

Giannini²,

Giofre³

et al. 2014

2014 44th European Microwave Conference

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Simulation study on field-plated buried gate-buried channel SiC MESFETs

Zhang

et al. 2009

2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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4H-SiCmetal-semiconductor field effect transistors (MESFETs) with Field -Plated (FP) andburied gate-buried channel slmctures are proposed and simulated. The buried gate-buried channel structure serves to reduce thesurface trapping effects, and theField-Plated structure acts asto increase thebreakdown voltage andreduce thepeakelectric field attheedgeofthegateanddrain side. Thesmall signal ACperformance of this kind ofMESFETs isalsoenhanced withtheincrement ofthelength oftheFP.

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