Fabrication and characteristics of back-gate black phosphorus effect field transistors based on PET flexible substrate

Yao, Xue; Jiang, Yaohua; Li, Fengping; Zhong, Rong; Wang, Quan

doi:10.1007/s13204-019-01226-8

Cited by 6 publications

(4 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[57] The achieved mobility is slightly lower than that is typically reported in the literature for similar devices with thinner BP [58][59][60][61] while mobilities up to a factor 5 higher have been reported for BP on a high-k gate dielectric. [62,63] As the BP channel had limited exposure to air during both the fabrication and measurement process, the mobility is mainly affected by interfacial and intrinsic defects as well as the number of layers.…”

Section: Transistor Characterizationmentioning

confidence: 99%

Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts

Viscardi

Intonti

Kumar

et al. 2023

Physica Status Solidi (b)

View full text Add to dashboard Cite

Herein, the fabrication and electrical characterization of multilayer black phosphorus (BP)‐based field effect transistors with Ni or NiCr alloy contacts are reported. The devices show p‐type conduction and hysteresis in the transfer characteristics that enable their use as nonvolatile memories. The differences between Ni and NiCr contacts are investigated and the Y‐function method is applied to extract the channel mobility up to 112 cm2 V−1 s−1 and the contact resistances. Ni contacts present specific contact resistance of 6.3 k Ω μm that increases to 18.1 k Ω μm for NiCr. These findings are important for the technological exploitation of multilayer BP in a new class of electronic and optoelectronic devices.

show abstract

Section: Transistor Characterizationmentioning

confidence: 99%

Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts

Viscardi

Intonti

Kumar

et al. 2023

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

“…At ≈20 °C, single‐ or FL‐BP exhibit high current switching ratios and layer‐dependent band gaps, which easily detect targeted analytes by monitoring changes in conductance/resistance and are extensively studied in biomolecule and gas detection. [ 30 ] The molar response coefficient of BP, which reflects the inherent sensing capacity of the same amount of molecules, is ≈20‐fold higher than those of MoS 2 and graphene. [ 31 ] LDBP is now critical in chemical and biological sensing due to its larger adsorption sites and excellent electronic characteristics.…”

Section: Structures and Propertiesmentioning

confidence: 99%

Low‐Dimensional Black Phosphorus in Sensor Applications: Advances and Challenges

Zhang

Bi³

et al. 2021

Adv Funct Materials

View full text Add to dashboard Cite

Low-dimensional black phosphorus (LDBP) materials have emerged, with considerable application potential in sensing due to their unique folded structures and remarkable physicochemical properties. These include anisotropies, layer-dependent and tunable band gaps, high carrier mobilities, high current switching ratios, and excellent electron donor capacities. As a type of supporting material that is favorable to signal transmission or reception, LDBP is widely researched in piezoelectric, flexible, chemical, and biomolecular sensors. This review summarizes the synthetic methods, properties, and modification strategies of LDBP, and then mainly focuses on the research progress in LDBP-based sensor applications, including physical and chemical sensors and biosensors. The major issues in LDBP-based sensor applications are also discussed. Finally, the prospects and challenges in the field of LDBPbased sensors are analyzed.

show abstract

“…Scaling leads to undesirable short channel effects (SCEs) and parasitic capacitances in a MOS device which make it unsuitable for RF application. To overcome these effects, 3D structures based on silicon such as FinFETs [1][2][3], gate-all-around FinFET and FETs [4][5][6], and other multi-gate FETs have been developed [7,8]. In recent years different materials have been introduced in nanochannel transistors, which exhibit better performance.…”

Section: Introductionmentioning

confidence: 99%

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

Kumar

Gupta²,

Goyal

et al. 2022

2022 IEEE International Conference on Nanoelectronics, Nanophotonics, Nanomaterials, Nanobioscience &Amp; Nanotechnology (5NANO

View full text Add to dashboard Cite

This work presents, a radio frequency (RF) performance evaluation of nanoscale gallium nitride-silicon-oninsulator fin field-effect transistor (GaN-SOI-FinFET). All the results have simultaneously been compared with conventional FinFET (Conv. FinFET). All the results show that the power gains have significantly improved in terms of Gma (maximum available power gain), Gms (maximum stable power gain), stern stability factor, GMT (maximum transducer power gain), and an appreciable reduction in intrinsic delay as compared to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX (maximum oscillator frequency) respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for highperformance RF applications.

show abstract

Fabrication and characteristics of back-gate black phosphorus effect field transistors based on PET flexible substrate

Cited by 6 publications

References 23 publications

Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts

Black Phosphorus Nanosheets in Field Effect Transistors with Ni and NiCr Contacts

Low‐Dimensional Black Phosphorus in Sensor Applications: Advances and Challenges

RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

Contact Info

Product

Resources

About