RF Performance Assessment of Sub-8nm GaN-SOI-FinFET Using Power Gain Parameters

Abstract

This work presents, a radio frequency (RF) performance evaluation of nanoscale gallium nitride-silicon-oninsulator fin field-effect transistor (GaN-SOI-FinFET). All the results have simultaneously been compared with conventional FinFET (Conv. FinFET). All the results show that the power gains have significantly improved in terms of Gma (maximum available power gain), Gms (maximum stable power gain), stern stability factor, GMT (maximum transducer power gain), and an appreciable reduction in intrinsic delay as compared to conventional FinFET. Current gain unilateral power gain and have also been evaluated for the extraction of fT (cut-off frequency) and fMAX (maximum oscillator frequency) respectively. fT and fMAX enhance by 88.8% and 94.6% respectively. This analysis has been done at several THz frequencies. The implementation of GaN in the channel reduces the parasitic capacitance and paves the way for highperformance RF applications.

Impact of Deep Cryogenic Temperatures on High-k Stacked Dual Gate Junctionless MOSFET Performance: Analog and RF analysis

“…Kstable values for varied temperatures are drawn from the small-signal yparameters to analyze the device reliability [28]. It is observed that Kstable > 1 at greater frequencies, however, a small change of 12% in critical frequency is notable at Kstable=1 as the temperature falls from 400 K to 50 K denoting improved RFstable device at DCT [29][30].…”