Fabricating in-plane transistor and memory using atomic force microscope lithography towards graphene system on chip

Aharonov–Bohm interferences in polycrystalline graphene

“…Besides the observation of AB interferences in these structural defective systems, we will additionally demonstrate that the approach presented in this work can also be extended to graphene systems containing two parallel graphenic barriers with functional impurities, particularly, including oxygen impurities, which can be experimentally achieved as in refs. [44][45][46][47][48][49][50].…”

Application of scanning probe oxidation lithography in fabrication of micro-nano devices

“…和施加电压有明显的线性关系 [25,28,35,40~43] . Park等 [41] 对 石墨烯进行氧化时, 发现电压每增加1 V, 氧化石墨烯 宽度增加5 nm±2 nm. Garcıa等 [28] 观察到在非接触模式 下, 向AFM针尖施加电压脉冲可形成水桥.…”

“…一般来说, 氧化物尺寸随着扫描速度的减小而增 大 [45] , 这是由于在外部电场下, 冷凝物形成水桥的时 间较长, 发生氧化反应的时间长, 扩散到基底与针尖 界面的氧阴离子的数目增加, 所以水桥的尺寸增加 [46] . Park等 [41,47] 利用AFM对单层石墨烯片进行局部阳 极氧化时, 发现在固定偏压下, 氧化石墨烯的宽度会随 着扫描速度的增加而降低. Stiévenard等 [25] 认为, 硅氧 化物高度的倒数1/h与logv具有线性关系, 如图6所示.…”

Chemical and structural analysis of sub-20 nm graphene patterns generated by scanning probe lithography

“…The direct and resist-less lithography offered by o-SPL has generated a variety of nanopatterns on layered materials such as graphene and transition metal dichalcogenides [7][8][9][10][11][12]. The patterning capability has also been exploited to fabricate several electronic devices including quantum point contacts and fieldeffect transistors on layered materials [13][14][15][16][17][18][19][20].…”