2017
DOI: 10.1088/1361-6439/aa8a38
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Fabricating 40 µm-thin silicon solar cells with different orientations by using SLiM-cut method

Abstract: Thin silicon foils with different crystal orientations were fabricated using the stress induced lift-off (SLiM-cut) method. The thickness of the silicon foils was approximately 40 µm. The 1 1 1 foil had a smoother surface than the 1 0 0 foil. With surface passivation, the minority carrier lifetimes of the 1 0 0 and 1 1 1 silicon foil were 1.0 µs and 1.6 µs, respectively. In this study, 4 cm 2 -thin silicon solar cells with heterojunction structures were fabricated. The energy conversion efficiencies were deter… Show more

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Cited by 3 publications
(2 citation statements)
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“…Silicon solar cells are the focus of considerable research efforts because of their high energy-conversion efficiency (~25%) (Green et al, 2015), stability, and so on (Bruel, 1995; Dross, 2008; Shahrjerdi et al, 2012; Radhakrishnan et al, 2014; Kobayashi et al, 2015; Lee et al, 2016; Green et al, 2017; Wang et al, 2017). Ultra-thin silicon wafers with thickness in the range of 40–60 μm are particularly suitable for high-efficiency solar cells because of their high light absorption and flexibility (Dross, 2008).…”
Section: Introductionmentioning
confidence: 99%
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“…Silicon solar cells are the focus of considerable research efforts because of their high energy-conversion efficiency (~25%) (Green et al, 2015), stability, and so on (Bruel, 1995; Dross, 2008; Shahrjerdi et al, 2012; Radhakrishnan et al, 2014; Kobayashi et al, 2015; Lee et al, 2016; Green et al, 2017; Wang et al, 2017). Ultra-thin silicon wafers with thickness in the range of 40–60 μm are particularly suitable for high-efficiency solar cells because of their high light absorption and flexibility (Dross, 2008).…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, it is important to minimize the waste associated with wafer losses during sawing. Several methods are available for fabricating kerf-less thin silicon wafers, such as the stress-inducing process (Shahrjerdi et al, 2012; Wang et al, 2017), ion implantation (Bruel, 1995; Lee et al, 2016), and epitaxial growth (Radhakrishnan et al, 2014; Kobayashi et al, 2015). Since it is difficult to form a stable trajectory during the ion-implantation process, the resulting wafers tend to have high surface roughness (Suo, 1989).…”
Section: Introductionmentioning
confidence: 99%