F. A. Kröger: <i>The Chemistry of Imperfect Crystals</i>, North‐Holland Publishing Company‐Amsterdam 1964. 1039 Seiten. Preis: hfl. 110,‐.

Schmalzried, H.

doi:10.1002/bbpc.19640680615

Cited by 14 publications

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“…Thermodynamic analyses of point defects and charge carriers have been carried out to determine the best conditions for growing highly compensated p-type β-Ga2O3 thin-films. By using the Kroger method of quasichemical equations 34 , the thermodynamic equilibrium in the β-Ga2O3 (crystal) -O2 (gas) system was established to define the dependence of point defects and charge carriers on temperature (T) and oxygen partial pressure (Phole). In general, high oxygen pressures are required to achieve p-type conductivity triggered by native (or intrinsic) acceptors, which are associated to gallium vacancy (VGa).…”

Section: Thermodynamic Analysesmentioning

confidence: 99%

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

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Section: Thermodynamic Analysesmentioning

confidence: 99%

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

et al. 2019

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“…Thus, for a PZT film, in the case of Schottky volume disordering, we may derive as follows: [VPb″]=[VO••]=KS1/2. Hereinafter in the formulas Kreger’s notation is used [35].…”

Section: Discussionmentioning

confidence: 99%

Microstructure and Properties of PZT Films with Different PbO Content—Ionic Mechanism of Built-In Fields Formation

et al. 2019

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Experimental studies were conducted on the effects of lead oxide on the microstructure and the ferroelectric properties of lead zirconate-titanate (PZT) films obtained by the method of radio frequency (RF) magnetron sputtering of a ceramic PZT target and PbO2 powder with subsequent heat treatment. It is shown that the change in ferroelectric properties of polycrystalline PZT films is attributable to their heterophase structure with impurities of lead oxide. It is also shown that, even in the original stoichiometric PZT film, under certain conditions (temperature above 580 °C, duration greater than 70 min), impurities of lead oxide may be formed. The presence of a sublayer of lead oxide leads to a denser formation of crystallization centers of the perovskite phase, resulting in a reduction of the grain size as well as the emergence of a charge on the lower interface. The formation of the perovskite structure under high-temperature annealing is accompanied by the diffusion of lead into the surface of the film. Also shown is the effect of the lead ions segregation on the formation of the self-polarized state of thin PZT films.

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“…This amphoteric nature of Zn could be an origin of possible so-called "impurity autocompensation" effect. The problem of auto-compensation was discussed by Kroger [32] for Li doped ZnO, while Zn amphoteric nature has already been reported in GaAs [33].…”

Section: Intrinsic and Zn-doped P-type Ga2o3 A Reviewmentioning

confidence: 98%

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

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et al. 2020

Materials Today Physics

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F. A. Kröger: The Chemistry of Imperfect Crystals, North‐Holland Publishing Company‐Amsterdam 1964. 1039 Seiten. Preis: hfl. 110,‐.

Cited by 14 publications

References 0 publications

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

Microstructure and Properties of PZT Films with Different PbO Content—Ionic Mechanism of Built-In Fields Formation

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

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F. A. Kröger: The Chemistry of Imperfect Crystals, North‐Holland Publishing Company‐Amsterdam 1964. 1039 Seiten. Preis: hfl. 110,‐.

Cited by 14 publications

References 0 publications

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga2O3 semiconductor

Microstructure and Properties of PZT Films with Different PbO Content—Ionic Mechanism of Built-In Fields Formation

Ultra-high critical electric field of 13.2 MV/cm for Zn-doped p-type β-Ga2O3

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Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor

Enhancing the intrinsic p-type conductivity of the ultra-wide bandgap Ga₂O₃ semiconductor