Extremely High-Frequency Flexible Graphene Thin-Film Transistors

Park, Saungeun; Shin, Seung Heon; Yogeesh, Maruthi N.; Lee, Alvin L.; Rahimi, Somayyeh; Akinwande, Deji

doi:10.1109/led.2016.2535484

Cited by 45 publications

(35 citation statements)

References 22 publications

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“…Towards this end, basic research on lab-scale flexible devices and circuits have been investigated and developed over the past 10 years [423]. This sustained research has led to many notable achievements such as: (i) ~100 GHz graphene transistors on flexible glass [427], (ii) 20…”

Section: Flexible Applicationsmentioning

confidence: 99%

A review on mechanics and mechanical properties of 2D materials—Graphene and beyond

Akinwande

Brennan

Bunch

et al. 2017

Extreme Mechanics Letters

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Since the first successful synthesis of graphene just over a decade ago, a variety of twodimensional (2D) materials (e.g., transition metal-dichalcogenides, hexagonal boron-nitride, etc.) have been discovered. Among the many unique and attractive properties of 2D materials, mechanical properties play important roles in manufacturing, integration and performance for their potential applications. Mechanics is indispensable in the study of mechanical properties, both experimentally and theoretically. The coupling between the mechanical and other physical properties (thermal, electronic, optical) is also of great interest in exploring novel applications, where mechanics has to be combined with condensed matter physics to establish a scalable theoretical framework. Moreover, mechanical interactions between 2D materials and various substrate materials are essential for integrated device applications of 2D materials, for which the mechanics of interfaces (adhesion and friction) has to be developed for the 2D materials. Here we review recent theoretical and experimental works related to mechanics and mechanical properties of 2D materials. While graphene is the most studied 2D material to date, we expect continual growth of interest in the mechanics of other 2D materials beyond graphene.

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Section: Flexible Applicationsmentioning

confidence: 99%

A review on mechanics and mechanical properties of 2D materials—Graphene and beyond

Akinwande

Brennan

Bunch

et al. 2017

Extreme Mechanics Letters

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1,048

649

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“…This Perspective focuses on the mature technologies that are available in semiconductor fabrication plants ('fabs') today. It is also worth noting a number of encouraging recent developments with carbon nanotubes [12][13][14][15] and several two-dimensional semiconductors 16 , such as graphene 15,17,18 , black phosphorus 19 and chalcogenides [20][21][22][23] , which could provide next-generation flexible TFT IC technologies, either as novel standalone transistor technologies or by complementing existing TFTs. Furthermore, a key benefit of some TFT technologies is the possibility to use additive manufacturing techniques like printing, which could reduce costs [24][25][26][27][28][29] .…”

Section: Nature Electronicsmentioning

confidence: 99%

The development of flexible integrated circuits based on thin-film transistors

2018

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T hin-film transistors (TFTs) are currently the dominant technology for in-pixel switches and drivers in flat-panel displays. Trends in consumer electronics demand ever-higher display resolution and brightness, lower power consumption, and new features and form factors (such as curved and foldable displays). This drives TFT devices to deliver more complex functions than simply switching. For example, recent bezel-less displays delegate the task of row selection to TFT circuits integrated next to the pixel array. Such driver circuits comprise thousands of switches operating together -previously a job for silicon chips mounted around the display.Beyond displays, how far can thin-film circuits go in terms of replacing silicon complementary metal-oxide-semiconductor (CMOS) chips? Fig. 1 illustrates the key advantages of thin-film circuits on flexible substrates. The circuits can be fabricated on large substrates, thereby creating very thin, lightweight and ultra-flexible electronics 1,2 . Folding, rolling or crumpling such flexible circuits is possible without destroying the electronic functionality. Because of these properties, a flexible TFT-based microprocessor 3 (Fig. 1d) or thin-film near-field communication (NFC) tag (Fig. 1e) can, for example, be integrated imperceptibly into any object. TFT technologies also have considerable potential for fabrication on ultrathin stretchable substrates 4 that can be made porous to create breathable devices for contact with skin. With these features, thin-film integrated circuits (ICs) could be a game-changer for wearable electronics. Ultrathin, conformable ICs in the form of a tattoo could be used to monitor vital body parameters, communicating these parameters directly to a patient's smartphone or a medical database.In this Perspective, I discuss the potential of thin-film circuits on plastic substrates for the development of Internet of Things (IoT) and wearable applications. First I look at the different TFT technologies that can be realized on flexible substrates, and then discuss the impact TFT technology will have on circuit design at the level of digital logic gates and very-large-scale integration (VLSI) digital circuits. For the latter, I consider the use of thin-film ICs in the creation of low-cost radiofrequency identification (RFID) tags for everyday items. Flexible chips may initially be used to simply identify each item. Then, when the RFID chip is potentially replaced with a thinfilm NFC chip, standard smartphones and tablets equipped with NFC readers could identify objects and connect them to the cloud. Another advantage of thin-film IC technology is its potential to be combined with sensor or signage technology, thereby integrating more functionality into the objects, which is discussed in a section on analogue circuits. Finally, I will briefly examine the potential of silicon CMOS chip technology to be interfaced directly with TFT circuitry. TFT technologyThe development and optimization of transistor technologies are driven by four important figures of me...

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“…9 Graphene RF FETs using embedded gate transistors have achieved sub-THz cut off frequencies. 10 However, the Dirac cone band structure of graphene results in a zero bandgap, which limits current saturation in graphene devices. 11 The embedded gate structure has been shown to significantly improve current saturation in graphene RF FETs, resulting in improved voltage and power gain.…”

Section: Molybdenum Disulfide (Mosmentioning

confidence: 99%

Embedded gate CVD MoS2 microwave FETs

et al. 2017

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Recent studies have increased the cut off frequencies achievable by exfoliated MoS 2 by employing a combination of channel length scaling and geometry modification. However, for industrial scale applications, the mechanical cleavage process is not scalable but, thus far, the same device improvements have not been realized on chemical vapor deposited MoS 2 . Here we use a gate-first process flow with an embedded gate geometry to fabricate short channel chemical vapor deposited MoS 2 radio frequency transistors with a notable f T of 20 GHz and f max of 11.4 GHz, and the largest high-field saturation velocity, v sat = 1.88 × 10 6 cm/s, in MoS 2 reported so far. The gate-first approach, facilitated by cm-scale chemical vapor deposited MoS 2 , offers enhancement mode operation, I ON /I OFF ratio of 10 8 , and a transconductance (g m ) of 70 μS/μm. The intrinsic f T (f max ) obtained here is 3X (2X) greater than previously reported top-gated chemical vapor deposited MoS 2 radio frequency field-effect transistors. With as-measured S-parameters, we demonstrate the design of a GHz MoS 2 -based radio frequency amplifier. This amplifier has gain greater then 15 dB at 1.2 GHz, input return loss > 10 dB, bandwidth > 200 MHz, and DC power consumption of~10 mW.

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Extremely High-Frequency Flexible Graphene Thin-Film Transistors

Cited by 45 publications

References 22 publications

A review on mechanics and mechanical properties of 2D materials—Graphene and beyond

A review on mechanics and mechanical properties of 2D materials—Graphene and beyond

The development of flexible integrated circuits based on thin-film transistors

Embedded gate CVD MoS2 microwave FETs

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