The Max Planck Institute Grand Ensemble (MPI-GE) is the largest ensemble of a single comprehensive climate model currently available, with 100 members for the historical simulations and four forcing scenarios. It is currently the only large ensemble available that includes scenario representative concentration pathway (RCP) 2.6 and a 1% CO 2 scenario. These advantages make MPI-GE a powerful tool. We present an overview of MPI-GE, its components, and detail the experiments completed. We demonstrate how to separate the forced response from internal variability in a large ensemble. This separation allows the quantification of both the forced signal under climate change and the internal variability to unprecedented precision. We then demonstrate multiple ways to evaluate MPI-GE and put observations in the context of a large ensemble, including a novel approach for comparing model internal variability with estimated observed variability. Finally, we present four novel analyses, which can only be completed using a large ensemble. First, we address whether temperature and precipitation have a pathway dependence using the forcing scenarios. Second, the forced signal of the highly noisy atmospheric circulation is computed, and different drivers are identified to be important for the North Pacific and North Atlantic regions. Third, we use the ensemble dimension to investigate the time dependency of Atlantic Meridional Overturning Circulation variability changes under global warming. Last, sea level pressure is used as an example to demonstrate how MPI-GE can be utilized to estimate the ensemble size needed for a given scientific problem and provide insights for future ensemble projects.Large-ensemble projects of comprehensive coupled climate models are gaining traction as methods to robustly estimate internal variability in transient simulations and to quantify the forced signal (e.g., Kay

The performance of dye-sensitized solar and photoelectrochemical cells is strongly dependent on the light absorption and electron transfer events at the semiconductor−small molecule interface. These processes as well as photo/electrochemical stability are dictated not only by the properties of the chromophore and metal oxide but also by the structure of the dye molecule, the number of surface binding groups, and their mode of binding to the surface. In this article, we report the photophysical and electrochemical properties of a series of six phosphonate-derivatized [Ru(bpy) 3 ] 2+ complexes in aqueous solution and bound to ZrO 2 and TiO 2 surfaces. A decrease in injection yield and cross surface electron-transfer rate with increased number of diphosphonated ligands was observed. Additional phosphonate groups for surface binding did impart increased electrochemical and photostability. All complexes exhibit similar back-electron-transfer kinetics, suggesting an electron-transfer process rate-limited by electron transport through the interior of TiO 2 to the interface. With all results considered, the ruthenium polypyridyl derivatives with one or two 4,4′-(PO 3 H 2 ) 2 bpy ligands provide the best balance of electron injection efficiency and stability for application in solar energy conversion devices.

The MPI‐ESM1.2 is the latest version of the Max Planck Institute Earth System Model and is the baseline for the Coupled Model Intercomparison Project Phase 6 and current seasonal and decadal climate predictions. This paper evaluates a coupled higher‐resolution version (MPI‐ESM1.2‐HR) in comparison with its lower‐resolved version (MPI‐ESM1.2‐LR). We focus on basic oceanic and atmospheric mean states and selected modes of variability, the El Niño/Southern Oscillation and the North Atlantic Oscillation. The increase in atmospheric resolution in MPI‐ESM1.2‐HR reduces the biases of upper‐level zonal wind and atmospheric jet stream position in the northern extratropics. This results in a decrease of the storm track bias over the northern North Atlantic, for both winter and summer season. The blocking frequency over the European region is improved in summer, and North Atlantic Oscillation and related storm track variations improve in winter. Stable Atlantic meridional overturning circulations are found with magnitudes of ~16 Sv for MPI‐ESM1.2‐HR and ~20 Sv for MPI‐ESM1.2‐LR at 26°N. A strong sea surface temperature bias of ~5°C along with a too zonal North Atlantic current is present in both versions. The sea surface temperature bias in the eastern tropical Atlantic is reduced by ~1°C due to higher‐resolved orography in MPI‐ESM‐HR, and the region of the cold‐tongue bias is reduced in the tropical Pacific. MPI‐ESM1.2‐HR has a well‐balanced radiation budget and its climate sensitivity is explicitly tuned to 3 K. Although the obtained reductions in long‐standing biases are modest, the improvements in atmospheric dynamics make this model well suited for prediction and impact studies.

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Flexible synthesized MoS2 transistors are advanced to perform at GHz speeds. An intrinsic cutoff frequency of 5.6 GHz is achieved and analog circuits are realized. Devices are mechanically robust for 10,000 bending cycles.

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We report on the gigahertz radio frequency (RF) performance of chemical vapor deposited (CVD) monolayer MoS2 field-effect transistors (FETs). Initial DC characterizations of fabricated MoS2 FETs yielded current densities exceeding 200 μA/μm and maximum transconductance of 38 μS/μm. A contact resistance corrected low-field mobility of 55 cm(2)/(V s) was achieved. Radio frequency FETs were fabricated in the ground-signal-ground (GSG) layout, and standard de-embedding techniques were applied. Operating at the peak transconductance, we obtain short-circuit current-gain intrinsic cutoff frequency, fT, of 6.7 GHz and maximum intrinsic oscillation frequency, fmax, of 5.3 GHz for a device with a gate length of 250 nm. The MoS2 device afforded an extrinsic voltage gain Av of 6 dB at 100 MHz with voltage amplification until 3 GHz. With the as-measured frequency performance of CVD MoS2, we provide the first demonstration of a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

The understanding of various types of disorders in atomically thin transition metal dichalcogenides (TMDs), including dangling bonds at the edges, chalcogen deficiencies in the bulk, and charges in the substrate, is of fundamental importance for TMD applications in electronics and photonics. Because of the imperfections, electrons moving on these 2D crystals experience a spatially nonuniform Coulomb environment, whose effect on the charge transport has not been microscopically studied. Here, we report the mesoscopic conductance mapping in monolayer and few-layer MoS 2 field-effect transistors by microwave impedance microscopy (MIM). The spatial evolution of the insulator-to-metal transition is clearly resolved. Interestingly, as the transistors are gradually turned on, electrical conduction emerges initially at the edges before appearing in the bulk of MoS 2 flakes, which can be explained by our firstprinciples calculations. The results unambiguously confirm that the contribution of edge states to the channel conductance is significant under the threshold voltage but negligible once the bulk of the TMD device becomes conductive. Strong conductance inhomogeneity, which is associated with the fluctuations of disorder potential in the 2D sheets, is also observed in the MIM images, providing a guideline for future improvement of the device performance.MoS 2 | microwave impedance microscopy | edge states | electrical inhomogeneity | metal-insulator transition E lectrostatic gating in the field-effect transistor (FET) configuration has played an essential role in the blooming field of semiconducting transition metal dichalcogenides (TMDs) such as MoS 2 and WSe 2 (1). The electrical control of carrier densities in these naturally formed 2D sheets is crucial for the realization of many intriguing phenomena, such as the metal−insulator transition (2-6), novel spin and valley physics (7-12), and superconducting phases (13-15). In addition, the carrier modulation provides an ideal tuning parameter to study the screening effect, which is particularly important for charge transport in 2D materials that are highly susceptible to local variations of the disorder potential (2-5, 16, 17). As a result, a complete understanding of the electronic properties of TMD FETs at all length scales, i.e., from local defects in the atomic scale, to electronic inhomogeneity in the mesoscale, to device performance in the macroscale, is imperative for both fundamental research on and practical applications of these fascinating materials.Transport and most optical measurements on TMD FETs are inherently macroscopic in nature, in which the sample response is averaged over large areas. TMD films in actual devices, however, are far from electronically uniform. Due to the relatively large amount of intrinsic defects and the inevitable charged states in the substrates, mesoscopic electrical inhomogeneity is not uncommon in TMDs, leading to hopping transport and percolation transition in the devices (6,(16)(17)(18)(19). Little is known, however, about...