Extreme voltage recovery in GaAs:Ti intermediate band solar cells

Linares, P.G.; Martı́, Antonio; Antolín, E.; Ramiro, I.; López, E.; Hernández, E.; Marrón, D. Fuertes; Artacho, I.; Tobias, Irwin; Gérard, P.; Chaix, C.; Campion, R. P.; Foxon, C. T.; Stanley, C.R.; Molina, S. I.; Ĺuque, A.

doi:10.1016/j.solmat.2012.09.028

Cited by 24 publications

(17 citation statements)

References 20 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…IBSCs have been realized using semiconductor quantum dots (QDs) [3][4][5][6][7][8][9], highly mismatched alloys [10][11][12] and semiconductor bulk materials containing a high density of deep-level impurities [13][14][15], amongst others. This work deals exclusively the first of these (QD-IBSCs), paying specific attention to the InAs/GaAs based prototypes, which have received particular attention.…”

Section: Introductionmentioning

confidence: 99%

The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells

Mellor

Ĺuque

Tobias

et al. 2014

Solar Energy Materials and Solar Cells

Self Cite

View full text Add to dashboard Cite

a b s t r a c tIn recent years, all the operating principles of intermediate band behaviour have been demonstrated in InAs/GaAs quantum dot (QD) solar cells. Having passed this hurdle, a new stage of research is underway, whose goal is to deliver QD solar cells with efficiencies above those of state-of-the-art single-gap devices. In this work, we demonstrate that this is possible, using the present InAs/GaAs QD system, if the QDs are made to be radiatively dominated, and if absorption enhancements are achieved by a combination of increasing the number of QDs and light trapping. A quantitative prediction is also made of the absorption enhancements required, suggesting that a 30 fold increase in the number of QDs and a light trapping enhancement of 10 are sufficient. Finally, insight is given into the relative merits of absorption enhancement via increasing QD numbers and via light trapping.

show abstract

Section: Introductionmentioning

confidence: 99%

The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells

Mellor

Ĺuque

Tobias

et al. 2014

Solar Energy Materials and Solar Cells

Self Cite

View full text Add to dashboard Cite

show abstract

“…The measurement of the photo-generated current density (J L ) as a function of the V OC for different light concentrations constitute a useful tool for the evaluation of the voltage preservation in IBSCs [6,7]. For a detailed description of this technique, the reader is encouraged to visit Ref.…”

Section: Resultsmentioning

confidence: 99%

“…Both requirements have already been experimentally verified in quantum dots (QD) IBSCs. In this respect, sub-bandgap photocurrent (I L ) originated by two-step photon absorption has been reported in [3,4] while open-circuit voltage (V OC ) not limited by any of the IB material sub-bandgaps has been reported in [5][6][7] at low temperature. In order to accomplish these principles, the IBSC concept demands some requirements such as, for example, that the IB is partially filled with electrons during operation but their discussion is out of the scope of this work [8,9].…”

Section: Introductionmentioning

confidence: 99%

Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept

Linares

López

Ramiro

et al. 2015

Solar Energy Materials and Solar Cells

Self Cite

View full text Add to dashboard Cite

IBSCs. In these cells, the dilute nitrogen in the barrier plays an important role for the strain-balance (SB) of the QD layer region that would otherwise create dislocations under the effect of the accumulated strain. The introduction of GaAsN SB layers allows increasing the light absorption in the QD region by multi-stacking more than 100 QD layers. The photo-generated current density (J L ) versus V OC was measured under varied concentrated light intensity and temperature. We found that the V OC of the cell at 20K is limited by the bandgap of the GaAsN barriers, which has important consequences regarding IBSC bandgap engineering that are also discussed in this work.

show abstract

“…The maximum voltage attainable for a diode solar cell (open-circuit voltage; V 0 c) is limited to the bandgap energy E G of the material, where voltage is further reduced below E G /q due to nonradiative losses, mismatch between the acceptance angle of spontaneous emission and the solid angle subtended from the sun, and energy losses from electrical contacts. Experimentally, the open-circuit voltage of a solar cell has been observed to match E G /q when operating at low temperature under solar concentration [1]. Another mechanism for open-circuit voltage reduction is band offset in heterojunction device architectures.…”

Section: Introductionmentioning

confidence: 96%

Heterojunction Band Offset Limitations on Open-Circuit Voltage in <roman>p</roman>-Z<roman>n</roman>T <roman>e/n</roman>-Z<roman>n</roman>S<roman>e</roman> Solar Cells

Teran

Chen

López

et al. 2015

IEEE J. Photovoltaics

Self Cite

View full text Add to dashboard Cite

show abstract

Extreme voltage recovery in GaAs:Ti intermediate band solar cells

Cited by 24 publications

References 20 publications

The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells

The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells

Voltage limitation analysis in strain-balanced InAs/GaAsN quantum dot solar cells applied to the intermediate band concept

Heterojunction Band Offset Limitations on Open-Circuit Voltage in <roman>p</roman>-Z<roman>n</roman>T <roman>e/n</roman>-Z<roman>n</roman>S<roman>e</roman> Solar Cells

Contact Info

Product

Resources

About