Indoor photovoltaic energy harvesting is a promising candidate to power millimeter (mm)-scale systems. The theoretical efficiency and electrical performance of photovoltaics under typical indoor lighting conditions are analyzed. Commercial crystalline Si and fabricated GaAs and Al 0.2 Ga 0.8 As photovoltaic cells were experimentally measured under simulated AM 1.5 solar irradiation and indoor illumination conditions using a white phosphor light-emitting diode to study the effects of input spectra and illuminance on performance. The Al 0.2 Ga 0.8 As cells demonstrated the highest performance with a power conversion efficiency of 21%, with open-circuit voltages >0.65 V under low lighting conditions. The GaAs and Al 0.2 Ga 0.8 As cells each provide a power density of ∼100 nW/mm 2 or more at 250 lx, sufficient for the perpetual operation of present-day low-power mm-scale wireless sensor nodes.
GaAs photovoltaics are promising candidates for indoor energy harvesting to power small-scale (≈1 mm2) electronics. This application has stringent requirements on dark current, recombination, and shunt leakage paths due to low-light conditions and small device dimensions. The power conversion efficiency and the limiting mechanisms in GaAs photovoltaic cells under indoor lighting conditions are studied experimentally. Voltage is limited by generation–recombination dark current attributed to perimeter sidewall surface recombination based on the measurements of variable cell area. Bulk and perimeter recombination coefficients of 1.464 pA/mm2 and 0.2816 pA/mm, respectively, were extracted from dark current measurements. Resulting power conversion efficiency is strongly dependent on cell area, where current GaAs of 1-mm2 indoor photovoltaic cells demonstrates power conversion efficiency of approximately 19% at 580 lx of white LED illumination. Reductions in both bulk and perimeter sidewall recombination are required to increase maximum efficiency (while maintaining small cell area near 1 mm2) to approach the theoretical power conversion efficiency of 40% for GaAs cells under typical indoor lighting conditions.
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