Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes

Durmuş, Haziret; Atav, Ülfet

doi:10.1063/1.3633116

Cited by 20 publications

(9 citation statements)

References 12 publications

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“…The diode current current I in a Schottky diode in the presence of appreciable diode series resistance R s is cyclically dependent on itself, the applied voltage V , the absolute diode temperature T , effective barrier height φ , the ideality factor n [12,13,14]. That is,…”

Section: The Hypothesismentioning

confidence: 99%

“…MS device parameters are known to depend on factors such as applied bias and junction temperature [13,20]. The complexity of the MS diode equation is the foremost reason for the existence of the many extraction methods and their varied simplifying assumptions.…”

Section: Case I -Constant Barrier Heightmentioning

confidence: 99%

“…Based on the many empirical measurements in the literature, the variation of barrier height with bias x is commonly taken to be linear [13,22] i.e.…”

Section: Case II -Variable Barrier Heightmentioning

confidence: 99%

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A new symmetry-based extraction method of Schottky diode parameters from resistance-compensated I-V characteristics

Ocaya,

Yakuphanoglu

2021

Preprint

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We present a novel resistance-compensated I-V method to extract the series resistance, ideality factor, barrier height and built-in potential of a metal-semiconductor diode. We show that a reduced equation arises from a unique but hitherto unreported symmetry in the Schottky equation when it is written as an ordinary differential equation. In spite of the intense mathematical justification, we show how this new equation is directly applicable to an empirical data set through a simple algorithm. We test the method on a new Al/p-Si/Bi 2 Se 3 /Al Schottky diode and compare it with the Cheung-Cheung method on the same data. The series resistance was found to change exponentially with applied bias with a rate constant that depends on the incident illumination. The barrier height decreased with bias but was independent of the incident illumination. The trends in the results of the method agree strongly with the literature and may yield more accurate diode parameters compared to other electrical methods.

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Section: The Hypothesismentioning

confidence: 99%

Section: Case I -Constant Barrier Heightmentioning

confidence: 99%

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A new symmetry-based extraction method of Schottky diode parameters from resistance-compensated I-V characteristics

Ocaya,

Yakuphanoglu

2021

Preprint

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“…Then, Kiuru et al [53] has suggested another new model for the thermal resistance and series resistance of a SBD. Durmuş and Atav [54] have suggested a method for determining the bias dependent behavior of the series resistance of a SBD from the I − V data by help of TE equations. They [54] have made definition of the relative merit of the method by applying the method on some artificial I − V data sets corresponding to known R s values and comparing their own conclusions with the other methods.…”

Section: Introductionmentioning

confidence: 99%

“…Durmuş and Atav [54] have suggested a method for determining the bias dependent behavior of the series resistance of a SBD from the I − V data by help of TE equations. They [54] have made definition of the relative merit of the method by applying the method on some artificial I − V data sets corresponding to known R s values and comparing their own conclusions with the other methods. Recently, Oruç and Altındal [50] have applied Norde [43], Bohlin [45], Mikhelashvili [55], and Cheung [40] methods to I -V data to determine the main parameters of a SBD.…”

Section: Introductionmentioning

confidence: 99%

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Türüt¹

2020

Turk J Phys

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It is expected the fact that the current following across metal-semiconductor (MS) rectifying contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their electrical properties obey thermionic emission (TE) current model. But, it has been seen that the abnormal behaviors in the measured electrical characteristics cannot be exactly understood by the classical TE transport theory. In the literature, the observed abnormal behaviors have been successfully explained by a Gaussian distribution function and by the pinch-off model being interaction of the neighbor patches suggested by Tung and coworkers, the named discrete regions model as "patches" with low barrier placed in a higher uniform barrier area.

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Highly Efficient Filterless Bilateral Majority Carrier‐Type Color Photodetectors

Cho

Kim

Choi

2022

Advanced Optical Materials

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Photodetectors (PDs) are essential for promoting the modern technology‐reliant lifestyles. Accordingly, the demand for efficient PDs with built‐in signal amplification capabilities is constantly increasing. Generally, built‐in signal amplification is achieved using an avalanching process that operates at a high bias voltage with inevitable excess noise. In this study, back‐to‐back Schottky diodes (BTB SDs) are designed to demonstrate a significant amplification of signals at low bias voltages with relatively low excess noise. Furthermore, the detection efficiency is bilateral and relies less on the illuminated junction or the bias polarity, but is influenced by the wavelength of the illuminating light owing to the specific device structures employed. This enables the identification of the color of the incident light without using any color filters. The BTB graphene–insulator–silicon‐on‐insulator (BTB G–I–SOI) PDs fabricated with controlled interfacial oxides exhibit photoresponsivity up to 2.01 × 104 A W−1, specific detectivity of 1.57 × 1014 cm Hz1/2 W−1 at 5 V, and a rapid response (≈0.3 ms) for a two‐millimeter‐long channel. Thus, BTB G–I–SOI PDs are highly efficient filterless color sensors that establish a novel route for diverse applications of PDs.

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Extraction of voltage-dependent series resistance from I-V characteristics of Schottky diodes

Cited by 20 publications

References 12 publications

A new symmetry-based extraction method of Schottky diode parameters from resistance-compensated I-V characteristics

A new symmetry-based extraction method of Schottky diode parameters from resistance-compensated I-V characteristics

Oncurrent-voltage and capacitance-voltage characteristics of metal-semiconductor contacts

Highly Efficient Filterless Bilateral Majority Carrier‐Type Color Photodetectors

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