Extracting Small‐Signal Model Parameters of Graphene‐Based Field‐Effect Transistors

Wang, Shao-Qing; Miao, Rui-Xia; Peng, Songang; Jin, Zhi

doi:10.1002/pssa.201800477

Cited by 5 publications

(4 citation statements)

References 35 publications

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“…A traditional "cold" pinch-off method was used to obtain the values of the ECPs. [24][25][26] Table 1 reports the values of the drain current, transconductance, threshold voltage, the ECPs, the intrinsic input and feedback time constants (i.e., τ gs ¼ R gs C gs and τ gd ¼ R gd C gd ), the unity current gain cut-off frequency ( f t ), and the maximum frequency of oscillation ( f max ) at the reference temperature (T 0 ) of 25 C. The intrinsic non-quasi-static (NQS) effects that occur in response to rapid signal changes from the intrinsic device's inertia are modeled by the three intrinsic time constants (τ m , τ gs , and τ gd ). The f t and f max values are determined from the measured short-circuit current gain (h 21 ) and maximum stable/available gain (MSG/MAG), respectively.…”

Section: Sensitivity-based Analysismentioning

confidence: 99%

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

Alim

Naima

Rezazadeh

2021

Physica Status Solidi (a)

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Herein, the temperature dependence of direct current (DC) and scattering parameters of GaAs pseudomorphic high‐electron‐mobility transistors (pHEMTs) before and after back‐end‐of‐line process (multilayer technology) by evaluating corresponding equivalent‐circuit models is reported on. The change of the relative sensitivity of the microwave performance with ambient temperature is evaluated using scattering parameter measurements and the corresponding equivalent‐circuit models. The devices studied are two pHEMTs with the same 200 μm gate width but manufactured using pre‐ and post‐multilayer technology. The investigation is conducted under both cooled and heated conditions, through temperature variations from −25 to 125 °C. Although the thermal impact highly depends on the selected operating condition, the bias point is chosen to allow for a fair comparison between the transistor fabricated before and after multilayer technologies to the maximum. Similar patterns of thermal sensitivities are observed for the pre and post multilayer‐manufactured devices but in the case of the multilayer device, the temperature effect is more pronounced.

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Section: Sensitivity-based Analysismentioning

confidence: 99%

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

Alim

Naima

Rezazadeh

2021

Physica Status Solidi (a)

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“…where, As shown in Equations (7)-(9), our primary task is to derive R g , A, and 1 + C gs /C gd . The value of 1 + C gs /C gd is deduced from the ratio of the imaginary part of Z 21 and Z 22 [22]. That is:…”

Section: Modeling R S and R Dmentioning

confidence: 99%

“…Prior works [21,22] calculated A based on the value of C x and R ch , i.e., C x is determined from the slope m of the linear regression of −ω/imag(Z 22 ) against the ω 2 curve, and R ch is calculated from…”

Section: Modeling R S and R Dmentioning

confidence: 99%

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs pHEMTs

Dang

Yang

et al. 2019

Electronics

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Accurate large signal GaAs pHEMT models are essential for devices’ performance analysis and microwave circuit design. This, in turn, mandates precise small signal models. However, the accuracy of small signal models strongly depends on reliable parasitic parameter extraction of GaAs pHEMT, which also greatly influences the extraction of intrinsic elements. Specifically, the parasitic source and drain resistances, R s and R d , are gate bias-dependent, due to the two-dimensional charge variations. In this paper, we propose a new method to extract R s and R d directly from S-parameter measurements of the device under test (DUT), which save excessive measurements and complicated parameter extraction. We have validated the proposed method in both simulation and on-wafer measurement, which achieves better accuracy than the existing state-of-the-art in a frequency range of 0.5–40 GHz. Furthermore, we develop a GaAs pHEMT power amplifier (PA) to further validate the developed model. The measurement results of the PA at 9–15 GHz agree with the simulation results using the proposed model.

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“…The properties of the monolayer or bilayer are also different from the graphite. The material is also used in transparent electrodes [7], photodetectors [8], barristors [9], and high-frequency field-effect transistors (FETs) [10,11]. Current gain cut-off frequency in a graphene FET is related with 5 To whom correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Self-heating controlled current-voltage and noise characteristics in graphene

Ardaravičius¹,

Kiprijanovič²,

Alsalman³

et al. 2020

J. Phys. D: Appl. Phys.

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Pulsed current–voltage characteristics have been measured for epitaxial SiC graphene under controlled lattice temperature conditions. The monolayer and AB stacked bilayer graphene is dry transferred on SiO2. The measured characteristics of two-terminal samples with coplanar electrodes demonstrate non-ohmic behaviour up to intermediate-high fields. At high currents thermal effects come into play and soft damage of the samples takes place. Bilayer graphene samples withstand 20 kV cm−1 electric field when few nanosecond voltages pulses are applied. The results are treated in terms of hole drift velocity estimated from the data on current under the assumption of uniform electric field and constant hole density. The highest velocity of ∼3.5–5 × 106 cm s−1 (∼1.5 × 107 cm s−1) is estimated for the bilayer (monolayer) graphene. The velocity results are interpreted with hot phonons. High frequency noise is measured at 10 GHz for the monolayer graphene and the associated shot noise is resolved.

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Extracting Small‐Signal Model Parameters of Graphene‐Based Field‐Effect Transistors

Cited by 5 publications

References 35 publications

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

Thermal Sensitivity of Microwave Pseudomorphic High‐Electron‐Mobility Transistor Performance: Pre and Post Multilayer Technology

A New Method to Extract Gate Bias-Dependent Parasitic Resistances in GaAs pHEMTs

Self-heating controlled current-voltage and noise characteristics in graphene

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