Extended-wavelength InGaAs on GaAs hybrid image sensors

Multispectral and hyperspectral imaging technologies in conservation: current research and potential applications

“…Standard InGaAs detectors (In 0.53 Ga 0.47 As) grown on indium phosfide (InP) substrates are sensitive in the 0.85-1.7 µm spectral range and currently available in formats up to 640 ǂ 512 pixels [28]. Better performances might be achieved by growing the InGaAs on a gallium arsenide (GaAs) substrate [29,30].…”

Wavelength extended InGaAs/InAlAs/InP photodetectors using n-on-p configuration optimized for back illumination

“…The photodiodes using ternary In 0.53 Ga 0.47 As lattice matched to InP substrate with cutoff wavelength of about 1.7 lm has been widely used in optical communications where response speed is the most important trait of concern, their excellent performances have been definitely proved. Wavelength extended InGaAs photodiodes grown by using hydride vapor phase epitaxy (HVPE) [4][5][6], metalorganic vapor phase epitaxy (MOVPE) [7][8][9][10][11] or molecular beam epitaxy (MBE) [12,13] methods with different type of buffer structures have been reported, their performances have been well evaluated.…”

Gas source MBE grown wavelength extended 2.2 and 2.5μm InGaAs PIN photodetectors

“…The photodetectors using ternary In 0.53 Ga 0.47 As material lattice matched to InP substrate with cut-off wavelength of about 1.7 lm has been widely used in optical communications and other fields for decades, and their excellent performances have been definitely proved. Extended wavelength InGaAs photodetectors grown by using hydride vapor phase epitaxy (HVPE) [1][2][3][4] or metalorganic vapor phase epitaxy (MOVPE) [5][6][7][8] methods with different type of buffer layers and hetero-junction structures have been reported, and their performances were well evaluated, but MBE grown devices still remains a challenge [9,10].…”