Gas source MBE grown wavelength extended 2.2 and 2.5μm InGaAs PIN photodetectors

Performance of gas source MBE-grown wavelength-extended InGaAs photodetectors with different buffer structures

“…In this case an additional buffer layer should be inserted to prevent the degradation of the photodetector performances. Wavelength-extended InGaAs photodiodes grown by hydride vapor phase epitaxy [4][5][6], metalorganic vapor phase epitaxy [7][8][9][10] or molecular beam epitaxy [11][12][13][14] methods with different buffer structures have been reported. In this article, the gas source molecular beam epitaxy (GSMBE) growth of InGaAs PIN photodetectors with cut-off wavelengths of 2.0, 2.4 and 2.7 mm at room temperature is reported and the effect of the buffer structure on the detector performance is investigated in detail.…”

Effect of proton irradiation on extended wavelength In0.83Ga0.17As infrared detector

“…The irradiation inducing degeneration of the performances of lattice-matched InGaAs detector has been studied in detail by http many researchers [7][8][9][10][11]. Extended wavelength InGaAs detectors attracted much attention in recent decades [2,[12][13][14][15]. However, the investigations on their irradiation effect are still far from enough.…”

Distinction investigation of InGaAs photodetectors cutoff at 2.9μm

“…Many efforts have been made to extend the cutoff wavelength of the In x Ga 1-x As photodetectors from about 1.7 lm (x = 0.53, lattice matched to InP substrate) to the longer wavelength side for the importance of the short wave infrared (SWIR) band of 1-3 lm [1][2][3][4][5][6][7][8][9][10][11], which exhibiting particular spectroscopic features including strong water absorption band around 1.4, 1.9 and 2.7 lm, as well as the high contrast for earth observation from the satellite [12]. However, to our knowledge the longest cutoff wavelength of the detectors at room temperature is still around 2.6-2.7 lm [2,11], which corresponding to a lattice mismatch of about 2.2% for x $ 0.85.…”