Exponential absorption edge and disorder in Column IV amorphous semiconductors

Zanatta, A. R.; Mulato, Marcelo; Chambouleyron, I.

doi:10.1063/1.368768

Cited by 34 publications

(11 citation statements)

References 84 publications

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“…As the thermal annealing advances, however, its frequency is shifted from ϳ460 to ϳ480 cm -1 as a clear indication that the Si films are becoming less disordered. 14,21 Such behavior is consistent with the variations that take place in ⌬ ͓Fig. 5͑b͔͒, which is known to be proportional to changes in the dihedral Si-Si bond angle 14 and with the development of Si crystallites ͑Fig.…”

Section: Discussionsupporting

confidence: 65%

Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples

Ferri¹,

Zanatta²

2008

Journal of Applied Physics

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This work reports on the crystallization of amorphous silicon (a-Si) films doped with 1 at. % of nickel. The films, with thicknesses ranging from 10 to 3000 nm, were deposited using the cosputtering method onto crystalline quartz substrates. In order to investigate the crystallization mechanism in detail, a series of undoped a-Si films prepared under the same deposition conditions were also studied. After deposition, all a-Si films were submitted to isochronal thermal annealing treatments up to 1000 °C and analyzed by Raman scattering spectroscopy. Based on the present experimental results, it is possible to state that (a) when compared to the undoped a-Si films, those containing 1 at. % of Ni crystallize at temperatures ∼100 °C lower, and that (b) the film thickness influences the temperature of crystallization that, in principle, tends to be lower in films thinner than 1000 nm. The possible reasons associated to these experimental observations are presented and discussed in view of some experimental and thermodynamic aspects involved in the formation of ordered Si–Si bonds and in the development of Ni-silicide phases.

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Section: Discussionsupporting

confidence: 65%

Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples

Ferri¹,

Zanatta²

2008

Journal of Applied Physics

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“…When the alloys are grouped according to their average coordination number, relationships such as that between the optical gap and the glass transition temperature have been obtained [22]. Moreover, it should be pointed out that N c is an important parameter for describing the glasses-forming tendencies topologically [23]. In a ternary compounds A x B y C (1−x−y) , N c is generalized as…”

Section: The Structural Role Of Lone-pair Electrons In Achieving the mentioning

confidence: 99%

Short-range order analysis and electrical properties of As30Se70−xSnx glassy system

Balboul

Fouad

Fayek

et al. 2008

Journal of Alloys and Compounds

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“…Next, we look at electronic structure parameters obtained from optical transmission spectroscopy measurements including optical band gap (E g ) as well as Urbach energy (E U ) and Tauc parameter (B 1/2 ), two measures of disorder in amorphous materials [58,[69][70][71]. To determine band gap, we have calculated both the Tauc band gap, E Tauc , and the isoabsorption gap, E 04 .…”

Section: Electronic Structurementioning

confidence: 99%

Tuning the properties of a complex disordered material: Full factorial investigation of PECVD-grown amorphous hydrogenated boron carbide

Nordell

Keck

Nguyen

et al. 2016

Materials Chemistry and Physics

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A multiresponse 2 5 full factorial experiment is performed to investigate the effects of growth conditions (temperature, power, pressure, total flow rate, partial precursor flow rate) on the chemical, mechanical, dielectric, electronic, and charge transport properties of thin-film amorphous hydrogenated boron carbide (a-B x C:H y ) grown by plasma-enhanced chemical vapor deposition (PECVD) from orthocarborane. The main and interaction effects are determined and discussed, and the relationships between properties are investigated via correlation analysis. The process condition with the strongest influence on growth rate is pressure, followed by partial precursor flow rate, with low pressure and high partial flow rate conditions yielding the highest growth rates. The atomic concentration of hydrogen (at.% H) and density are controlled primarily by temperature and power, with low temperature and power conditions leading to relatively soft, hydrogen-rich, low-density, porous films, and vice versa. The B/C ratio is controlled by temperature, power, pressure, and the power*pressure interaction, and is uncorrelated to hydrogen concentration. Thin-film dielectric and electronic structure properties, including high-frequency dielectric constant (ε 1 ), low-frequency/total dielectric constant (κ), optical band gap (E Tauc /E 04 ), and Urbach energy (E U ), are correlated strongly with at.% H, and weakly to moderately with B/C ratio. These properties are dominated by the influence of temperature, with a second significant influence from the power*pressure interaction. The interaction of power and pressure leads to two opposite growth regimes-high power and high pressure or low power and low pressure-that can produce a-B x C:H y films with similar dielectric or electronic structure properties. Charge transport properties also show a correlation with at.% H and B/C, but not with the electronic structure and disorder parameters, which suggests a complicated relationship between the two. The range of properties measured highlights the potential of thin-film a-B x C:H y for low-κ dielectric and neutron detection applications, and suggests clear pathways for future material property optimization.

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Exponential absorption edge and disorder in Column IV amorphous semiconductors

Cited by 34 publications

References 84 publications

Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples

Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples

Short-range order analysis and electrical properties of As30Se70−xSnx glassy system

Tuning the properties of a complex disordered material: Full factorial investigation of PECVD-grown amorphous hydrogenated boron carbide

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