Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples

Ferri, F. A.; Zanatta, A. R.

doi:10.1063/1.2955457

Cited by 9 publications

(7 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Unclassified

Order By: Relevance

“…Recently, we have described detailed investigations on the crystallization process of Ni-containing a-Si films by using Raman spectroscopy [12][13][14]. In a similar way, and driven by the above facts, this work reports a study about Mn-containing a-Ge films.…”

Section: Introductionmentioning

confidence: 86%

Low-temperature metal-induced crystallization of Mn-containing amorphous Ge thin films

Ferri¹

2012

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

This work focuses on the crystallization of amorphous germanium (a-Ge) thin films induced by manganese species. A series of Mn-containing a-Ge films ([Mn]~0−3.7 at.% range) was deposited at 150°C by the cosputtering technique. After deposition, all films were submitted to isochronal thermal annealing treatments up to 600°C and analyzed by Raman scattering, optical transmission spectroscopy and electrical resistivity measurements. The experimental results indicate that: (a) Mn impurity lowers the crystallization temperature of a-Ge in~100°C, as confirmed by the Raman analyses, (b) the optical properties of the films are affected by both the insertion of Mn and the temperature of thermal treatment, with the optical bandgap staying in the range of 0.7−1 eV, and (c) the electrical resistivity of the samples is also influenced by the Mn concentration and by the temperature of annealing, varying between~1.0×10 1 and 1.6×10 4 Ω cm. These experimental observations were systematically studied and the possible reasons associated to them are presented and discussed.

show abstract

Section: Introductionmentioning

confidence: 86%

Low-temperature metal-induced crystallization of Mn-containing amorphous Ge thin films

Ferri¹

2012

Journal of Non-Crystalline Solids

View full text Add to dashboard Cite

show abstract

“…12,20 At this point, it is important to notice that the freezing temperature ͑T f ϳ 50 K͒ obtained in the present work is slightly higher than that reported ͑T f ϳ 20 K͒ for Ge 100−x Mn x films with similar Mn contents. 12,13 Within the possible reasons for this discrepancy one can mention: ͑a͒ the preparation method ͑cosputtering versus thermal evaporation or molecular beam epitaxy͒ and conditions, which can give rise to materials with quite different structural characteristics, 11 ͑b͒ the sample thickness, 21 ͑c͒ the influence of the substrate onto the stress present in the films, 22 ͑d͒ the unintentional presence of impurities, etc. In any case, it is clear that the spin glass phenomenon takes place when a large amount of Mn is inserted in an amorphous host.…”

Section: Resultsmentioning

confidence: 99%

Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films

Ferri¹,

Pereira-da-Silva

Zanatta³

et al. 2010

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

This work reports on the magnetic properties of Ge100−xMnx (x=0–24 at. %) films prepared by cosputtering a Ge+Mn target and submitted to cumulative thermal annealing treatments up to 500 °C. Both as-deposited and annealed films were investigated by means of compositional analysis, Raman scattering spectroscopy, magnetic force microscopy, superconducting quantum interference device magnetometry, and electrical resistivity measurements. All as-deposited films (either pure or containing Mn) exhibit an amorphous structure, which changes to crystalline as the annealing treatments are performed at increasing temperatures. In fact, the magnetic properties of the present Ge100−xMnx films are very sensitive to the Mn content and whether their atomic structure is amorphous or crystalline. More specifically: whereas the amorphous Ge100−xMnx films (with high x) present a characteristic spin glass behavior at low temperature; after crystallization, the films (with moderate Mn contents) are ferromagnetic at room temperature. Moreover, the magnetic behavior of the films scales with their Mn concentration and tends to be more pronounced after crystallization. Finally, the semiconducting behavior of the films, experienced by previous optical studies, was confirmed through electrical measurements, which also indicate the dependence of the resistivity with the atomic composition of the films.

show abstract

“…These figures are perfectly consistent with those obtained when studying the optical-structural properties of similar Si and SiN films prepared by sputtering. 28,29 It is also opportune to mention that, after annealing at 750 C, the NIR-OMC structure became partially non-homogeneous. This phenomenon can be attributed to differences in the thermal expansion coefficient between the deposited layers and the substrate, to the residual stress experienced by the somewhat thicker films that compose the NIR-OMC structure (Table I), or to a combination of these factors.…”

Section: Cavitymentioning

confidence: 99%

A simple-versatile approach to achieve all-Si-based optical micro-cavities

Gallo¹,

Zanatta²

2013

Journal of Applied Physics

Self Cite

View full text Add to dashboard Cite

Articles you may be interested inPhase shift multiplication effect of all-optical analog to electromagnetically induced transparency in two microcavities side coupled to a waveguide system At present, solid thin films are recognized by their well established and mature processing technology that is able to produce components which, depending on their main characteristics, can perform either passive or active functions. Additionally, Si-based materials in the form of thin films perfectly match the concept of miniaturized and low-consumption devices-as required in various modern technological applications. Part of these aspects was considered in the present work that was concerned with the study of optical micro-cavities entirely based on silicon and silicon nitride thin films. The structures were prepared by the sputtering deposition method which, due to the adopted conditions (atmosphere and deposition rate) and arrangement of layers, provided cavities operating either in the visible (at $670 nm) or in the near-infrared (at $1560 nm) wavelength ranges. The main differential of the work relies on the construction of optical microcavities with a reduced number of periods whose main properties can be changed by thermal annealing treatments. The work also discusses the angle-dependent behavior of the optical transmission profiles as well as the use of the COMSOL software package to simulate the microcavities. V C 2013 American Institute of Physics. [http://dx.

show abstract

Influence of film thickness on the crystallization of Ni-doped amorphous silicon samples

Cited by 9 publications

References 23 publications

Low-temperature metal-induced crystallization of Mn-containing amorphous Ge thin films

Low-temperature metal-induced crystallization of Mn-containing amorphous Ge thin films

Effect of Mn concentration and atomic structure on the magnetic properties of Ge thin films

A simple-versatile approach to achieve all-Si-based optical micro-cavities

Contact Info

Product

Resources

About