2008 IEEE International Symposium on Defect and Fault Tolerance of VLSI Systems 2008
DOI: 10.1109/dft.2008.30
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Exploring Density-Reliability Tradeoffs on Nanoscale Substrates: When Do Smaller Less Reliable Devices Make Sense?

Abstract: It is widely recognized that device and interconnect fabrics at the nanoscale will be character-

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Cited by 4 publications
(2 citation statements)
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“…As a result, complete connectivity among all the components will not be viable. Hence, the future systems will be characterized by a high level of complexity with limited connectivity [2], [5]. In addition, dark silicon phenomenon is expected to be more prominent among the future nano devices [6].…”
Section: Introductionmentioning
confidence: 99%
“…As a result, complete connectivity among all the components will not be viable. Hence, the future systems will be characterized by a high level of complexity with limited connectivity [2], [5]. In addition, dark silicon phenomenon is expected to be more prominent among the future nano devices [6].…”
Section: Introductionmentioning
confidence: 99%
“…It has been observed experimentally that the relationship between terminals and devices follows a power law with exponent r. This exponent depends on the design style and remains stable for different partitions of the circuit. Therefore, if we assume hierarchical consistency as previous work [85], we can use this property in cross-layer systems to estimate the amount of interconnects at any particular layer and decompose the global error probability to perform our analysis. Indeed, let us consider a cross-layer system of D s devices, see Figure 7.…”
Section: Analysis Methodsmentioning
confidence: 99%