Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs

Santillan-Quinonez, Gerard F.; Champac, Victor; Murphy, Roberto S.

doi:10.1016/j.sse.2010.06.016

Cited by 8 publications

(6 citation statements)

References 25 publications

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“…The decrease of the drain current in Figure 2 and the decrease in transconductance in Figure 3 with the applied magnetic field reveal the clear magnetoresistance effect [8,14]. …”

Section: Resultsmentioning

confidence: 99%

“…To ensure that the change in mobility is solely due to the change in magnetoresistance of the charged particles, the transconductance is plotted against the gate-to-source voltage based on the measured I d -V gs data in Figure 3 . The decrease of the drain current in Figure 2 and the decrease in transconductance in Figure 3 with the applied magnetic field reveal the clear magnetoresistance effect [ 8 , 14 ].…”

Section: Resultsmentioning

confidence: 99%

“…Hence, loop current and magnetic field are synonymous throughout this article unless otherwise specified. Due to both the loop current and the moving particles, this Lorentz will change the effective magnetoresistance of the carriers [ 8 , 14 ], which in turn reduces the mobility of the carriers in the strong inversion region of the device. In the strong inversion region of operation, the drift current dominates and hence the velocity of the carrier is high.…”

Section: Device Structure and Principle Of Operationsmentioning

confidence: 99%

“…In [ 7 ], the applied magnetic field was low while the sensitivity was higher than reported in the prior arts. However, in all the reported cases there is no model for the drain current using the Lorentz force to demonstrate the magnetoresistance effect [ 8 ].…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect

Chow

Chatterjee

Feng

2017

Sensors

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A novel concept of drain current modelling in rectangular normal MOS transistors with the Lorentz force has been proposed for the first time. The single-drain MOS transistor is qualified as a magnetic sensor. To create the Lorentz force, a DC loop current is applied through an on-chip metal loop around the device, and the relation between the applied loop current and the created magnetic field is assumed to be linear in nature. The drain current of the MOS transistor is reduced with the applied Lorentz force from both directions. This change in the drain current is ascribed to a change in mobility in the strong inversion region, and a change in mobility of around 4.45% is observed. To model this change, a set of novel drain current equations, under the Lorentz force, for the strong inversion region has been proposed. A satisfactory agreement of an average error of less than 2% between the measured and the calculated drain currents under the magnetic field created by an on-chip metal loop is achieved.

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“…The decrease of the drain current in Figure 2 and the decrease in transconductance in Figure 3 with the applied magnetic field reveal the clear magnetoresistance effect [8,14]. …”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Device Structure and Principle Of Operationsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect

Chow

Chatterjee

Feng

2017

Sensors

View full text Add to dashboard Cite

show abstract

“…The first type of sensor [1], [2] enhances the Hall voltage and is the most commonly used. In the second class of sensors [3]- [10] the current-lines deflection effect is enhanced and the resulting output current imbalance is measured on split-contacts. Magnetoresistors [3]- [5] and magnetotransistors [6]- [10] are the main current output sensors and their maximum reported sensitivity is similar, around 8 % of relative current imbalance /Tesla.…”

Section: Introductionmentioning

confidence: 99%

Enhanced sensitivity magnetoresistor with a venturi-tube shape

Santillan-Quinonez

Galup-Montoro

2012

10th IEEE International NEWCAS Conference

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Split-contact magnetoresistors (SCMs) are Hall effect sensors based on the current deflection effect of the magnetic field. We developed a simulation model of Hall sensors, including SCM, in COMSOL Multiphysics considering the transport mechanisms of diffusion and drift. We can simulate devices with a quite arbitrary shape. We use the magnitude of the current density in the deflection direction (on the longitudinal line of symmetry of the device) as a useful guide for the study of the effects of the geometry on the sensitivity to the magnetic field. Other than rectangular shapes, we propose a device with a Venturi-tube shape to increase the sensitivity of magnetoresistors.

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Fabrication and characterization of the split-drain MAGFET based on the nano-polysilicon thin film transistor

Zhao¹,

Wen²,

Meiwei³

et al. 2014

J. Semicond.

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A split-drain magnetic field-effect transistor (MAGFET) based on a nano-polysilicon thin film transistor (TFT) is proposed, which contains one source, two drains and one gate. The sensor chips were fabricated on (100) high resistivity silicon substrate by CMOS technology. When drain—source voltage equals 5.0 V and length and width ratio of the TFT channel is 80 μm/160 μm, the current and voltage magnetic sensitivities of the split-drain MAGFET based on the TFT are 0.018 mA/T and 55 mV/T, respectively. Through adopting nano-polysilicon thin films and nano-polysilicon thin films/high resistivity silicon heterojunction interfaces as the magnetic sensing layers, it is possible to realize detection of the external magnetic field. The test results show that magnetic sensitivity of the split-drain MAGFET can be improved significantly.

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Exploiting magnetic sensing capabilities of Short Split-Drain MAGFETs

Cited by 8 publications

References 25 publications

A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect

A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect

Enhanced sensitivity magnetoresistor with a venturi-tube shape

Fabrication and characterization of the split-drain MAGFET based on the nano-polysilicon thin film transistor

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