A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect

Chow, Hwang-Cherng; Chatterjee, Prasenjit; Feng, Wu‐Shiung

doi:10.3390/s17061199

Cited by 4 publications

(3 citation statements)

References 14 publications

(31 reference statements)

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“…The aim was to enable maximal sensitivity as a function of the geometry and the dimensions. More recently, and progressing towards the integration in smaller dimensions, semiconductor-based magnetic sensors such as Hall sensors have been implemented in CMOS 0.18 µm technology, in order to enable a new concept of drain current modeling in rectangular normal MOS transistors [ 110 ]. Yet another example is the integration of Hall Effect magnetic sensors in CMOS technology which was already designed and studied twenty years ago [ 111 ] to eliminate influences of packaging stress and temperature variations.…”

Section: Review Of Microscale Hall Effect-based Devicesmentioning

confidence: 99%

A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

Karsenty

2020

Sensors

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A comprehensive review of the main existing devices, based on the classic and new related Hall Effects is hereby presented. The review is divided into sub-categories presenting existing macro-, micro-, nanoscales, and quantum-based components and circuitry applications. Since Hall Effect-based devices use current and magnetic field as an input and voltage as output. researchers and engineers looked for decades to take advantage and integrate these devices into tiny circuitry, aiming to enable new functions such as high-speed switches, in particular at the nanoscale technology. This review paper presents not only an historical overview of past endeavors, but also the remaining challenges to overcome. As part of these trials, one can mention complex design, fabrication, and characterization of smart nanoscale devices such as sensors and amplifiers, towards the next generations of circuitry and modules in nanotechnology. When compared to previous domain-limited text books, specialized technical manuals and focused scientific reviews, all published several decades ago, this up-to-date review paper presents important advantages and novelties: Large coverage of all domains and applications, clear orientation to the nanoscale dimensions, extended bibliography of almost one hundred fifty recent references, review of selected analytical models, summary tables and phenomena schematics. Moreover, the review includes a lateral examination of the integrated Hall Effect per sub-classification of subjects. Among others, the following sub-reviews are presented: Main existing macro/micro/nanoscale devices, materials and elements used for the fabrication, analytical models, numerical complementary models and tools used for simulations, and technological challenges to overcome in order to implement the effect in nanotechnology. Such an up-to-date review may serve the scientific community as a basis for novel research oriented to new nanoscale devices, modules, and Process Development Kit (PDK) markets.

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Section: Review Of Microscale Hall Effect-based Devicesmentioning

confidence: 99%

A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

Karsenty

2020

Sensors

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“…With the continuous advance of semiconductor technology miniaturization, nanoscale integrated circuits have become extremely sensitive to external magnetic fields [1]. It is well known that miniaturizing conventional metal-oxide-semiconductor field-effect transistor (MOSFETs) at the nanoscale [2] results in a higher magnetic sensitivity with respect to the magnetic field due to the smaller active channel area [3], [4].…”

Section: Introductionmentioning

confidence: 99%

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

Hasan¹,

Mutlaq²,

Ali³

et al. 2023

IJECE

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In this paper, we investigated the effect of magnetic field on the carrier transport phenomenon in metal-oxide-semiconductor field-effect transistor (MOSFET) with double gates by examining the behavior of the semiconductor under the Lorentz force and a constant magnetic field. Various behaviors within the channel have been simulated including the potential distribution, conduction and valence bands, total current density, total charge density and the magnetic field. The results obtained indicate that this modulation affects the electrical characteristics of the device such as on-state current (ION), subthreshold leakage current (IOF), threshold voltage (VTh), and the Hall voltage (VH) is induced by the magnetic field. The change in threshold voltage caused by the magnetic field has been observed to affect the switching characteristics of the device, such as speed and power loss, as well as the threshold voltage VTh and (ION/IOF) ratio. Note that it is reduced by 10-3 V. 102 for magnetic fields of ±6 and ±5.5 tesla respectively.

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“…Transconductance and channel length are fundamental transistor parameters related to carrier velocity [4,5], magnetoresistance [6,7] and small-signal analysis. The variations in transconductance and channel length are critical for analog circuit design.…”

Section: Introductionmentioning

confidence: 99%

A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage

Chow,

Lee,

Cheng

et al. 2023

Electronics

Self Cite

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Device physics and accurate transistor modeling are necessary to reduce the operating voltage near the threshold for power-constrained circuits. Conventional device modeling for metal-oxide-semiconductor (MOS) transistors focuses on operations in either strong or weak inversion regimes, and the electrostatics at gate biases near the threshold voltage is rarely studied. This research proposed an analytical model to describe the distribution of the surface potential along the channel for near-threshold operation. Numerical device simulations were also performed to investigate the electrostatics near the threshold voltage. The numerical simulation with constant carrier mobility showed an overshoot in the transconductance due to decay of the lateral electric field with gate bias. The decay of the lateral electric field was predicted by the proposed analytical surface potential model which considered widening the channel length with flooding of the inversion carriers in the channel and gate overlap regions. The channel length widening effect saturated as the gate bias further increased. Therefore, evident transconductance overshoot was observed near the threshold voltage in short-channel devices.

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A Simple Drain Current Model for MOS Transistors with the Lorentz Force Effect

Cited by 4 publications

References 14 publications

A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

A Comprehensive Review of Integrated Hall Effects in Macro-, Micro-, Nanoscales, and Quantum Devices

Modeling of magnetic sensitivity of the metal-oxide-semiconductor field-effect transistor with double gates

A Surface Potential Model for Metal-Oxide-Semiconductor Transistors Operating near the Threshold Voltage

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