Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

Diagne, B.; Prégaldiny, F.; Lallement, Christophe; Sallèse, Jean-Michel; Krummenacher, F.

doi:10.1016/j.sse.2007.06.020

Cited by 48 publications

(13 citation statements)

References 21 publications

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“…The drift-diffusion model (DD) model has been used for carrier transportation because of its validity in the subthreshold regime even for channel length less than 30 nm [31][32][33]. The CVT mobility model is used as it is a complete mobility model in which mobility depends on doping density, temperature, parallel electric field and vertical electric field.…”

Section: Simulation Methods and Modelsmentioning

confidence: 99%

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An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

Bhushan¹,

Sarangi²,

Krishna³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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Section: Simulation Methods and Modelsmentioning

confidence: 99%

“…The CVT mobility model is used as it is a complete mobility model in which mobility depends on doping density, temperature, parallel electric field and vertical electric field. Following [33], ATLAS default model parameter beta and vsat.n have also been modified by setting beta=1 and…”

Section: Simulation Methods and Modelsmentioning

confidence: 99%

An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

Bhushan¹,

Sarangi²,

Krishna³

et al. 2013

JSTS:Journal of Semiconductor Technology and Science

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“…The models in [18] and [19] are two interesting descriptions of DG MOSFETS which derive expressions for mobile charge densities and current along the channel in long-channel devices. In [19], a description of Short-Channel Effects (SCE) in subthreshold region, including Drain Induced Barrier Lowering (DIBL), sub-threshold swing and mobility degradation [1], enters into the expressions of charge and current.…”

Section: B Multi-gate Device Modelsmentioning

confidence: 99%

“…In [19], a description of Short-Channel Effects (SCE) in subthreshold region, including Drain Induced Barrier Lowering (DIBL), sub-threshold swing and mobility degradation [1], enters into the expressions of charge and current. SCE are also a subject of [20] while quantum effects (carrier quantization) are treated and included in the models presented in [21]- [24].…”

Section: B Multi-gate Device Modelsmentioning

confidence: 99%

Computationally Efficient Multiple-Independent-Gate Device Model

Antidormi

Frache

Graziano

et al. 2016

IEEE Trans. Nanotechnology

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Abstract-Nanowire Field Effect Transistors (FETs) with multiple independent gates around a silicon channel feature ultimate gate control and are regarded as promising candidates for next generation transistors. Being inherently more complex than conventional gate-all-around nanowire FETs, they require longer simulation times, especially with numerical simulations. We present a new model enabling the efficient computation of voltages and current in modular semiconductor structures with an arbitrary number of independent gate regions. Its validity extends on Gate-All-Around MOSFETs, FinFETs and gate-less channels. It exploits existing models for conventional devices and builds results on top of these. Being completely general, the method is independent from the models used to describe each region, a charge-based model in our case. Applied to a multiindependent-gate nanowire FET structure, extensive comparison of the proposed method with results from physics-based TCAD Atlas software and with numerical exact results show very good agreement with relative errors of less than 1.8% for potentials and less than 4% for currents, under a broad variations of physical parameters as well as biasing conditions. Interpreted language implementation shows a performance advantage in excess of one order of magnitude with respect to standard optimized numerical methods, still providing excellent accuracy, and making it suitable for implementation in circuit simulators.

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“…1 Introduction Double-Gate (DG) MOSFETs with undoped body have become very attractive for scaling CMOS devices down to nanometer sizes because of a number of advantages such as ideal sub-threshold slope, excellent short-channel-effects immunity, and unique mobility enhancement [1][2][3]. However, in deep submicron scale, the hot-carrier induced damage becomes a major reliability concern.…”

mentioning

confidence: 99%

An analytical drain current model for undoped GSDG MOSFETs including interfacial hot‐carrier effects

Djeffal¹,

Bentrcia²,

Bendib³

2010

Phys. Status Solidi (c)

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In the present work, a comprehensive drain current model including the interfacial hot‐carrier degradation effects for undoped symmetric gate stack double gate (GSDG) MOSFET and the expressions of transconductance and drain conductance have been obtained. Exploiting this new device model, we have found that the incorporation of a high‐k layer between oxide region and gate metal leads to drain current enhancement, improved output conductance, increased transconductance parameter and enhanced interfacial hot‐carrier immunity. The proposed model has been validated by comparing the analytical I‐V characteristics with 2‐D numerical results. The obtained results may provide a theoretical basis and physical insights for multigate MOSFET‐based circuits design including the hot‐carrier degradation effects. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects

Cited by 48 publications

References 21 publications

An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

An Analytical Model for the Threshold Voltage of Short-Channel Double-Material-Gate (DMG) MOSFETs with a Strained-Silicon (s-Si) Channel on Silicon-Germanium (SiGe) Substrates

Computationally Efficient Multiple-Independent-Gate Device Model

An analytical drain current model for undoped GSDG MOSFETs including interfacial hot‐carrier effects

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