An advanced MOSFET model for the 60 -400 K temperature range is developed starting with the industry standard PSP model. The new model is experimentally verified, implemented in a commonly used circuit simulator and tested for convergence. This provides a robust and accurate description of low temperature MOSFET characteristics, including analogue performance. Simulations on a switched-capacitor integrator design are performed to illustrate the capabilities of the new model and to justify a new design methodology for the extended temperature range.Introduction: Two industry standard MOSFET models, BSIM [1] and PSP [2], are developed for the traditional temperature range (233-400 K) and have no real capabilities below 200 K. Hence they are not directly applicable to circuit simulations in the extended temperature range which may include cryogenic temperatures. Recent progress in the formulation of the surface-potential-based approach [3, 4] enables simulations for the 60 -400 K range that retain all the capabilities of the original PSP model including an extremely accurate and physical description of device characteristics and secondary effects in all regions of operation. This in turn supports the design of mixed signal circuits intended to operate in a wide temperature range [5]. This Letter contains the first description of the new model and its design applications.
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