Explanation of the Charge Trapping Properties of Silicon Nitride Storage Layers for NVMs—Part II: Atomistic and Electrical Modeling

Abstract

Based on the material analysis of the SiN layers presented in part I of this paper, we develop accurate atomistic and electrical models for the silicon nitride (SiN)-based nonvolatile memory devices, taking into account the candidate SiN defects responsible for the memory effect. Our analysis points out the role of the hydrogen atoms and Si dangling bonds in the trapping properties of SiN films with different stoichiometries. The atomistic models provide a comprehensive picture describing the energy level and the occupation number of the different defects in the SiN. The electrical model coupled with the atomistic results, for the first time, demonstrates the ability to describe the program/erase curves of charge-trap memory cells with SiN storage layers with diversified composition. Good agreement between simulations and experimental results coming from the material analysis and the electrical characterization of thin (type-B device) and thick (type-A device) tunnel oxide memory cells is shown. Index Terms-Ab initio, charge trap, metal gate/Al 2 O 3 / nitride/oxide/silicon (MANOS), nonvolatile memory (NVM), silicon nitride (SiN) composition.

Effect of alloying temperature on the capacitance–voltage and current–voltage characteristics of low‐pressure chemical vapor deposition SiNx/n‐GaN MIS structures

“…After alloying at higher temperature, the PF trap depth becomes larger, which is also observed by others . Noting that these two values are within the range 1.0–1.2 eV denoting the trap energy depth of Si dangling bond and Si–H defects , which suggests the LPCVD‐SiN x bulk current conduction may be related with Si dangling bonds and Si–H defects. The trap depth of Si dangling bond is slightly larger than that of Si–H defects .…”

Effect of Work Function Difference Between Top and Bottom Electrodes on the Resistive Switching Properties of SiN Films

“…The abundant traps in SiN film are generally obtained by N atoms substituted by Si atoms, producing silicon dangling bonds [12]. The relationship between the processinduced traps and M is a key factor to explain different RS operation in SiN films.…”

Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

“…The noise analysis performed in [49] pinpoints the location of the traps within the junctions (either in the dielectric or at the metal-dielectric interfaces). Silicon nitride is known as a trap-rich material where the abundance of traps is generally associated with silicon atoms replacing nitrogen atoms, resulting in silicon dangling bonds, referred to as K-center defects [50]. Other defects can be associated with hydrogen, which is typically present in the SiNx matrix [51].…”