Explanation of positive and negative PICTS peaks in SI-GaAs

Schmerler, Steve; Hahn, Torsten; Hahn, S.; Niklas, J. R.; Gründig-Wendrock, B.

doi:10.1007/s10854-007-9564-2

Cited by 7 publications

(5 citation statements)

References 18 publications

(23 reference statements)

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“…Although the assignment of this negative peak is not clear yet, the theoretical background of the appearance of negative peaks in MD-PICTS spectra is well understood. As was shown recently, the occurrence of positive and negative peaks for one defect level mainly depends on the initial occupation of the level prior to the excitation pulse [9]. A comparison of results obtained for the samples V, VI and VII, which are grown under different C/Si-ratios hints at different formation of defect levels during the growth process.…”

Section: Resultssupporting

confidence: 60%

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Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Hahn

Beyer

Gällström

et al. 2008

MSF

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The novel technique microwave detected photo induced current transient spectroscopy (MD-PICTS) was applied to semi-insulating 6H-SiC in order to investigate the properties of inherent defect levels. Defect spectra can be obtained in the similar way to conventional PICTS and DLTS. However, there is no need for contacting the samples, which allows for non-destructive and spatially resolved electrical characterization. This work is focused on the investigation of semi-insulating 6H-SiC grown under different C/Si-ratios. In the corresponding MD-PICTS spectra several shallow defect levels appear in the low temperature range. However the peak assignment needs further investigation. Additionally different trap reemission dynamics are obtained for higher temperatures, which are supposed to be due to different compensation effects.

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Section: Resultssupporting

confidence: 60%

“…Application of improved spectra evaluation techniques as well as adaption of a generalized rate equation system to SiC may improve the understanding of the experimental results. The latter was recently shown to explain experimentally obtained carrier dynamics in GaAs and Si [9,11].…”

Section: Resultsmentioning

confidence: 78%

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Hahn

Beyer

Gällström

et al. 2008

MSF

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“…Šis modelis jungia elektronų laidumo juostoje, skylučių valenti-nėje juostoje ir pagautų krūvininkų tankius. Toks vykstančio proceso traktavimas išlieka aktualus ir mūsų dienomis ir yra taikomas kituose modeliuose (Schmerler et al 2008). Mums šis modelis yra įdomus dar ir tuo, kad modelio netiesiškumai yra kvadratiniai, todėl dauguma gautųjų teorinių rezultatų gali būti apibendrinti netiesiniams ląstelės sužadinimo modeliams.…”

Section: Krūvininkų Rekombinacijos Modelisunclassified

Netiesinių matematinių modelių grafuose skaitinė analizė

Tumanova¹,

Čiegis²,

Krylovas³

et al. 2012

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Esu dėkinga savo mokslinio darbo vadovui prof. habil. dr. Raimondui Čiegiui už skirtą laiką, pagalbą ir padrąsinimą. Dėkoju doc. dr. Mečislavui Meilūnui už recenzavimą ir patarimus, padėjusius patobulinti disertaciją, prof. habil. dr. Vladimirui Gavriušinui už konsultacijas. Dėkoju Matematinio modeliavimo katedros kolektyvui už pagalbą ir palaikymą, taip pat už gerą atmosferą darbe. Ačiū mano artimiesiems už kantrybę ir supratingumą.

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“…A rate equation system is used, in which the only approximation is, that no direct interactions between defect levels are included 9. …”

Section: Simulationsmentioning

confidence: 99%

Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)

Berger

Schüler

Anger

et al. 2011

Physica Status Solidi (a)

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The contactless electrical characterization techniques MDP and MD‐PICTS will be presented in this paper. Both methods are predestined for defect investigation in a variety of semiconductors. Due to a so far not reached sensitivity, major advantages of MDP are its high spatial resolution and its measurement speed, which allows for two dimensional inline measurements at production speed. Furthermore a versatile numerical tool for simulations of electrical properties of a semiconductor as a function of defect parameters was developed. MD‐PICTS is a contactless temperature dependent measurement which allows the determination of activation energies of trap levels in the material. To demonstrate the abilities of both methods, measurements conducted at different semiconductor materials, e.g. silicon, silicon carbide, gallium arsenide and indium phosphide, will be presented exemplarily.

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Explanation of positive and negative PICTS peaks in SI-GaAs

Cited by 7 publications

References 18 publications

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Contact-Less Electrical Defect Characterization of Semi-Insulating 6H-SiC Bulk Material

Netiesinių matematinių modelių grafuose skaitinė analizė

Contactless electrical defect characterization in semiconductors by microwave detected photo induced current transient spectroscopy (MD‐PICTS) and microwave detected photoconductivity (MDP)

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