Experimental Study on Displacement Damage Effects of Anode-Short MOS-Controlled Thyristor

Li, Lei; Li, Zehong; Ren, Min; Li, Junjie; Yang, Guixia; Chen, Xiao-Chi; Liu, Xuqiang; Yuan, Jiugang; Shi, Jianmin

doi:10.1109/tns.2020.2971646

Cited by 10 publications

(17 citation statements)

References 28 publications

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“…During measurements, the gate voltage is fixed at 5 V, which is larger than the threshold voltage (∼0.5 V). This figure is a redrawing of Fig.7 in [3]. increases to a large value of the order of 10 Ω.…”

Section: 2×10 13 CM -2mentioning

confidence: 96%

“…The trigger current, a critical parameter, is suitable to characterize the DD tolerance of AS-MCTs. Unfortunately, this parameter is not modelled in the previous work [3]. From the prospective of device physics, this work presents the modeling for the trigger current of AS-MCTs.…”

Section: 2×10 13 CM -2mentioning

confidence: 99%

“…P ULSE discharge technology based on capacitive energy storage has been extensively used in several fields such as industrial area (extreme ultraviolet source), scientific research (nuclear fission driver) and so on [1]- [5]. Owing to the surge in current capability without current saturation, but with high current density up to 10 3 A•cm -2 and high current rising rate of ∼10 3 −10 6 A•µs -1 , as well as metal-oxide-silicon (MOS) gating, MOS-controlled Thyristor (MCT) is the natural switching unit for pulse discharge applications [3], [5]- [8]. A conventional MCT structure requires a gate voltage to form OFF-FET channel extracting carriers, and henceforth realizing a high blocking capability, which complicates the driver circuit and hampers the system reliability [7].…”

Section: Introductionmentioning

confidence: 99%

“…A conventional MCT structure requires a gate voltage to form OFF-FET channel extracting carriers, and henceforth realizing a high blocking capability, which complicates the driver circuit and hampers the system reliability [7]. The anode-short MCT (AS-MCT), proposed over the last ten years [3], [8], features a normally-off characteristic owing to the introduction of an anode-short structure as presented in Fig.1. The AS-MCT is a potential alternative to conventional MCT for pulse power applications.…”

Section: Introductionmentioning

confidence: 99%

“…The previous works in 1989 [15] and 2017 [4] have reported the neutron-induced DD effects on conventional MCTs. Recently, our collaboration present the neutron induced DD effect on AS-MCTs [3], which indicates that the degradation of trigger current is fatal. Once the anode current exceeds a critical value, named by trigger current, the AS-MCT enters a thyristor-like mode which effectuates a conductive modulation effect in device and results in a small on-state resistance, ∼mΩ.…”

Section: Introductionmentioning

confidence: 99%

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Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor

et al. 2020

IEEE J. Electron Devices Soc.

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The MOS-controlled Thyristor (MCT) has been characterized by MOS-gating, high current rise rate, and high blocking capability. The anode short MCT (AS-MCT) is distinguished from conventional MCT by an anode-short structure, which develops a normallyoff characteristic. As a composite structure made of metal-oxide-silicon and bipolar junction transistors, AS-MCT is susceptible to displacement damage induced by energetic radiation. The anode trigger current which denotes the latch-up of internal thyristor structure is a key parameter for AS-MCTs. From the aspects of devices physics, we propose a model to describe the displacement damage on trigger current. Our model provides an excellent fit to the experimental data of the AS-MCT samples subjected to fission neutrons with flux in the range of 3.1×10 9-5.5×10 13 cm-2. Moreover, this work shows that the high injection effect can alleviate the displacement damage of trigger current following high flux exposures.

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Section: 2×10 13 CM -2mentioning

confidence: 96%

Section: 2×10 13 CM -2mentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor

et al. 2020

IEEE J. Electron Devices Soc.

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Analytical model for total ionizing dose-induced excess base current in PNP BJTs

Chen

et al. 2020

Microelectronics Reliability

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Metastable acceptors in boron doped silicon: evidence of the defects contributing to carrier induced degradation

Chen¹,

Li²,

Zhang³

et al. 2021

J. Phys. D: Appl. Phys.

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This work focuses on the recombination-enhanced reactions of boron related defects in compensated silicon and their impact on the electrical performance of silicon devices. Using deep level transient spectroscopy, we measured the defect spectra in the collector of 14 MeV fusion neutron irradiated p-n-p silicon transistors during forward current injection, as well as the corresponding degradation kinetics of both current gain and leakage current on the same device. Two hole traps at E c + 0.43 eV and E c + 0.53 eV are proved to be acceptors in the lower half of the gap with significant recombination enhanced effects. These metastabe acceptors degrade the current gain by changing the space charge distribution in the p-n-p structure and are linked with carrier-induced boron-oxygen complexes responsible for the minority-carrier lifetime degradation of silicon photovoltaics.

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Experimental Study on Displacement Damage Effects of Anode-Short MOS-Controlled Thyristor

Cited by 10 publications

References 28 publications

Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor

Modeling the Displacement Damage on Trigger Current of Anode-Short MOS-Controlled Thyristor

Analytical model for total ionizing dose-induced excess base current in PNP BJTs

Metastable acceptors in boron doped silicon: evidence of the defects contributing to carrier induced degradation

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