Experimental Study of Gold-Gallium Arsenide Schottky Barriers

Padovani, Francesco; Sumner, G.

doi:10.1063/1.1713940

Cited by 207 publications

(70 citation statements)

References 7 publications

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“…The increase in ideality factor with decreasing temperature is known as the T 0 effect and was first reported by Padovani and Sumner [2]. The Schottky barrier height (SBH), F I2V measured by the I2V technique for TE decreases with decreasing temperature and increasing doping level, while the SBH F C2V measured by the capacitance-voltage ðC2VÞ method remains constant.…”

Section: Introductionmentioning

confidence: 99%

“…Generally, the SBD parameters are determined over a wide range of temperatures and doping concentrations in order to understand the nature of the barrier and the conduction mechanism. Thermionic emission (TE) theory is normally used to extract the SBD parameters [1][2][3][4][5][6][7], however, there have been several reports of certain anomalies [4,[7][8][9] at low temperatures. The ideality factor and barrier height determined from the forward bias current-voltage ðI2VÞ characteristics on the basis of the TE mechanism were found to be a strong function of temperature and doping concentration [5,[9][10][11][12][13][14][15][16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

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Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Hudait

Krupanidhi

2001

Physica B: Condensed Matter

122

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The barrier height and ideality factor of Au/n-GaAs Schottky diodes grown by metal-organic vapor-phase epitaxy (MOVPE) on undoped and Si-doped n-GaAs substrates were determined in the doping range of 2.5 Â 10 15 -1 Â 10 18 cm À3 at low temperatures. The thermionic-emission zero-bias barrier height for current transport decreases rapidly at concentrations greater than 1 Â 10 18 cm À3. The ideality factor also increases very rapidly at higher concentration and at lower temperature. The results agree quite well with thermionic field emission (TFE) theory. The doping dependence of the barrier height and the ideality factor were obtained in the concentration range of 2.5 Â 10 15 -1.0 Â 10 18 cm À3 and the results are well described using TFE theory. An excellent match between the homogeneous barrier height and the effective barrier height was observed which supports the good quality of the GaAs film. The observed variation in the zero-bias barrier height and the ideality factor can also be explained in terms of barrier height inhomogeneities in the Schottky diode. r

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Doping dependence of the barrier height and ideality factor of Au/n-GaAs Schottky diodes at low temperatures

Hudait

Krupanidhi

2001

Physica B: Condensed Matter

122

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“…The origins of inhomogeneous Schottky barrier theory dates back to the 1960's when non-linearities within the classic Richardson plot hindered the extraction of the SBH and Richardson constant (A * * ). 21 This became known as the T 0 effect whereby it was found that adding a temperature constant into the thermionic emission equation the plot would linearise and aid in the extraction of the SBH. We now know that at an inhomogeneous interface, the SBH will rise and the ideality factor fall as the temperature is increased due to the junction current becoming dominated by fewer low SBH patches [11][12][13] .…”

Section: Introductionmentioning

confidence: 99%

“…Many solutions were suggested to return linearity to the plots [21][22][23] before the link with inhomogeneities was made 9,11,15,24 . Two techniques exist to modify the classic Richardson plot to extract the barrier height, taking into account SBH lowering due to an inhomogeneous contact.…”

Section: Introductionmentioning

confidence: 99%

Analysis of inhomogeneous Ge/SiC heterojunction diodes

Gammon

Pérez‐Tomás

Shah

et al. 2009

Journal of Applied Physics

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In this article Schottky barrier diodes comprising of a n-n Germanium-Silicon Carbide (Ge-SiC) heterojunction are electrically characterised. Circular transmission line measurements prove that the nickel front and back contacts are ohmic, isolating the Ge/SiC heterojunction as the only contributor to the Schottky behaviour. Current-voltage plots taken at varying temperature (IVT) reveal that the ideality factor (n) and Schottky barrier height (Φ) are temperature dependent and that incorrect values of the Richardson constant (A * * ) are being produced, suggesting an inhomogeneous barrier. Techniques originally designed for metal-semiconductor SBH extraction are applied to the heterojunction results to extract values of Φ and A * * that are independent of temperature. The experimental IVT data is replicated using the Tung model. It is proposed that small areas, or patches, making up only 3% of the total contact area will dominate the I-V results due to their low SBH of 1.033 eV. The experimental IVT data is also analysed statistically using the extracted values of Φ to build up a Gaussian distribution of barrier heights, including the standard deviation and a mean SBH of 1.126 eV, which should be analogous to the SBH extracted from capacitance-voltage (C-V) measurements. Both techniques yield accurate values of A * * for SiC. However, the C-V analysis did not correlate with the mean SBH as expected.

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“…The current-voltage characteristics of Au/GaAs, Cr/Si, Ni/Si, and Au/Si [39][40][41] exhibited a so-called T 0 anomaly: explanation of the experimental data required the addition of a constant temperature T 0 to the absolute temperature in the significant exponential part of the characteristic. From model calculations by Levine [42,43], it appeared that this T 0 anomaly defined by exponential surface-state energy distribution with a width that was related to the value of T 0 .…”

Section: Discussionmentioning

confidence: 99%