Experimental Investigation of an Integrated Optical Interface for Power MOSFET Drivers

Vafaei, Raha; Rouger, Nicolas; To, D. N.; Crébier, Jean-Christophe

doi:10.1109/led.2011.2175196

Cited by 8 publications

(6 citation statements)

References 10 publications

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“…The dynamic behaviour of our devices was previously demonstrated in [9] and it showed a bandwidth above 800 kHz. However, due to low optical signal levels, high TIA gains were used, resulting in reduced measurement bandwidths (limiting the bandwidth to roughly 1MHz).…”

Section: Ac Setup and Approachmentioning

confidence: 51%

“…The IOD initial measurements were performed with LEDs at only three discrete wavelengths; the characterizations showed a responsivity of 0.046 A/W at 0 V Emitter bias and a bandwidth of 800 kHz when triggered with a 1 µW, 525 nm wavelength LED as reported in [9]. The experimental setup has been radically changed to allow for a wider range of measurements with high accuracy, high reproducibility, temperature control and on-wafer probing as shown in figure 3.…”

Section: DC Characterization a Setup And Measurement Approachmentioning

confidence: 99%

“…However, due to low optical signal levels, high TIA gains were used, resulting in reduced measurement bandwidths (limiting the bandwidth to roughly 1MHz). Unfortunately, the measured 3dB bandwidths are in the order of the setup measurement bandwidths [9]. In order to increase the modulated optical power levels at high frequencies over a wide wavelength range, an extension of the setup for AC measurement has been realized.…”

Section: Ac Setup and Approachmentioning

confidence: 99%

“…A schematic view of the integrated sensor is shown in Figure 1. Compared to the recent state of the art [1]- [5] where large and powerful laser sources are required to transfer both the information signal and its required energy, the proposed integration approach allows for smaller, lighter and low-cost optical sources such as LEDs [9]. This paper describes in detail the experimental approach and the particular setups developed in order to accurately characterize these specific IOD.…”

Section: Introductionmentioning

confidence: 99%

“…THE IOD STRUCTURE AND ITS CONSEQUENT MEASUREMENT SPECIFICATIONS As shown in Figure 1, the Emitter-Base N+/P-junction is chosen for the optical-detector as previously explained in [9], [10]. In this particular connection, the emitter photo generated leakage current will serve as the input electrical signal for the VMOS gate control.…”

Section: Introductionmentioning

confidence: 99%

See 4 more Smart Citations

Performance measurements of an optical detector designed for monolithic integration with a power VDMOS

Vafaei

Crébier

Rouger

2013

2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

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This paper demonstrates an accurate measurement procedure to characterize the DC and AC performance of an optical detector designed for monolithic integration with a 600 V vertical power MOS transistor. The spectral quantum efficiency (QE) from 400 nm up to 1 µm wavelengths has been measured. A QE of 26% in the 450 nm -520 nm wavelength range was achieved. The developed setup and measurement procedures can be used for diced samples, packaged devices, and on-wafer probing (maximum size: 4" wafers); furthermore, it is equipped with temperature control. The integrated optical detectors (IOD) key phenomena have been investigated for a wide range of wavelengths and biasing conditions, both experimentally and numerically. Simulation results as well as experimental results are presented and compared.

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Section: Ac Setup and Approachmentioning

confidence: 51%

Section: DC Characterization a Setup And Measurement Approachmentioning

confidence: 99%

Section: Ac Setup and Approachmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Performance measurements of an optical detector designed for monolithic integration with a power VDMOS

Vafaei

Crébier

Rouger

2013

2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC)

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Electric field distribution and voltage breakdown modeling for any PN junction

Rouger

2016

COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering

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Purpose – Scientists and engineers have been solving Poisson’s equation in PN junctions following two approaches: analytical solving or numerical methods. Although several efforts have been accomplished to offer accurate and fast analyses of the electric field distribution as a function of voltage bias and doping profiles, so far none achieved an analytic or semi-analytic solution to describe neither a double diffused PN junction nor a general case for any doping profile. The paper aims to discuss these issues. Design/methodology/approach – In this work, a double Gaussian doping distribution is first considered. However, such a doping profile leads to an implicit problem where Poisson’s equation cannot be solved analytically. A method is introduced and successfully applied, and compared to a finite element analysis. The approach is then generalized, where any doping profile can be considered. 2D and 3D extensions are also presented, when symmetries occur for the doping profile. Findings – These results and the approach here presented offer an efficient and accurate alternative to numerical methods for the modeling and simulation of mathematical equations arising in physics of semiconductor devices. Research limitations/implications – A general 3D extension in the case where no symmetry exists can be considered for further developments. Practical implications – The paper strongly simplify and ease the optimization and design of any PN junction. Originality/value – This paper provides a novel method for electric field distribution analysis.

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Self-contained control for turn-on transition of an optically driven IGBT

Riazmontazer

Mazumder

2014

2014 IEEE Applied Power Electronics Conference and Exposition - APEC 2014

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Experimental Investigation of an Integrated Optical Interface for Power MOSFET Drivers

Cited by 8 publications

References 10 publications

Performance measurements of an optical detector designed for monolithic integration with a power VDMOS

Performance measurements of an optical detector designed for monolithic integration with a power VDMOS

Electric field distribution and voltage breakdown modeling for any PN junction

Self-contained control for turn-on transition of an optically driven IGBT

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