Self-contained control for turn-on transition of an optically driven IGBT

Riazmontazer, Hossein; Mazumder, Sudip K.

doi:10.1109/apec.2014.6803500

Cited by 6 publications

(1 citation statement)

References 17 publications

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“…The main properties of SMC control are the appropriate transient performance, robustness against a large class of perturbations and uncertainties, and the possibility of stabilizing particular complex nonlinear systems, which are hard to stabilize using continuous state feedback control [21,22]. SMC has been applied to many plants, such as electrical motors [23], automotive system [24], aircraft [25], complex networks [26], spacecraft [27], flexible space structures [28], power systems [29], chaotic systems [30][31][32], underwater vehicles [33], robotic manipulators [34], and some of industrial processes [35]. In [36], a SMC approach is presented to stabilize a class of underactuated systems, which are represented in cascaded form.…”

Section: Introductionmentioning

confidence: 99%

Design of LMI‐based sliding mode controller with an exponential policy for a class of underactuated systems

Mobayen

2014

Complexity

101

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In this article, a novel sliding mode control (SMC) approach is proposed for the control of a class of underactuated systems which are featured as in cascaded form with external disturbances. The asymptotic stability conditions on the error dynamical system are expressed in the form of linear matrix inequalities. The control objective is to construct a controller such that would force the state trajectories to approach the sliding surface with an exponential policy. The proposed SMC has a simple structure because it is derived from the associated first-order differential equation and is capable of handling system disturbances and nonlinearities. The effectiveness of the proposed control method is validated using intensive simulations.

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Section: Introductionmentioning

confidence: 99%

Design of LMI‐based sliding mode controller with an exponential policy for a class of underactuated systems

Mobayen

2014

Complexity

101

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Closed-loop control of switching transition of SiC MOSFETs

Riazmontazer

Rahnamaee

Mojab

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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This paper presents a novel closed-loop active-gatecontrol (AGC) circuit for high-voltage SiC MOSFETs, used in the high-voltage, high-frequency and high-power-density applications. The proposed controller independently adjusts the switching di/dt and dv/dt by closed-loop control of the gate current and enables one to reach optimal performance in terms of loss, device stress, and EMI. The di/dt is adjusted to control the overvoltage stress and peak reverse recovery current while the dv/dt is adjusted to control the common mode (CM) noise and switching loss. The dv/dt is the primary source of the common mode noise in power electronics converters. Dynamic control of switching dv/dt has been somewhat overlooked in the state-of-the art works based on Si based power semiconductor devices (PSDs), and maximum achievable dv/dt is used to decrease the switching loss. However, the magnitude of generated dv/dt in the high-voltage SiC-based applications is appreciable because of the exceptionally higher switching speed of the SiC MOSFETs as compared to Si IGBTs. In contrast to other works, the proposed controller dynamically and independently controls the turn-off di/dt and dv/dt of a SiC MOSFET using closed-loop control of the gate current. Independent control of turn-off di/dt and dv/dt is achieved using a delay compensation circuit. This circuit compensates the total delay in the feedback loop and predicts the onset of transition between dv/dt and di/dt control regions. The proposed control circuit operation and advantages are presented and verified by experimental results.

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New single-bias all-optical ETO configuration for a 15 kV-100A SiC thyristor eliminating the turn-on leakage current

Riazmontazer

Mojab

Rahnamaee

et al. 2015

2015 IEEE Applied Power Electronics Conference and Exposition (APEC)

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In this paper a new single-bias optically-triggered (OT) emitter-turn-off (ETO) configuration for a 15kV-100A SiC thyristor, used in the next generation high-voltage highfrequency and high-power-density applications is outlined. Optical turn-off and turn-on of the OT ETO is achieved using an auxiliary optically-triggered power transistor (OTPT) in the anode path of the SiC thyristor. Leakage current during the turn-on transition of OT ETO is caused by the undesired activation of the turn-off path of the gate of the thyristor. This undesired activation is due to parasitic inductances and high di/dt in the commutation path, resulting in additional switching loss and electro-magnetic noise. In contrast to other works, the proposed method removes the leakage current enhancing the switching performance, reducing the switching loss and EMI. The other feature of the proposed work is using a single highvoltage bias eliminating the need for low-voltage (LV) control bias and devices in conventional methods. The system reliability is increased via using optical link to turn the SiC thyristor on and off, precluding the susceptibility to external noise. The proposed method and the OTPT are respectively verified through simulation and experimental results.

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Self-contained control for turn-on transition of an optically driven IGBT

Cited by 6 publications

References 17 publications

Design of LMI‐based sliding mode controller with an exponential policy for a class of underactuated systems

Design of LMI‐based sliding mode controller with an exponential policy for a class of underactuated systems

Closed-loop control of switching transition of SiC MOSFETs

New single-bias all-optical ETO configuration for a 15 kV-100A SiC thyristor eliminating the turn-on leakage current

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