Experimental Investigation of 4H-SiC Bulk Crystal Growth

Chourou, K; Anikin, Mikhail; Bluet, Jean‐Marie; Lauer, V.; Guillot, G.; Camassel, Jean; Juillaguet, Sandrine; Chaix‐Pluchery, Odette; Pons, M.; Pons, R.

doi:10.4028/www.scientific.net/msf.264-268.17

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…6H and 4H crystals with diameter up to 40 mm have been grown by the modified Lely method with 'in situ' sublimation etching (Tairov and Tsvetkov 1978, Tsvetkov et al 1998, Chourou et al 1998. An experimental set-up with RF heating and a graphite crucible was used.…”

Section: Crystal Growthmentioning

confidence: 99%

Defects in sublimation-grown SiC bulk crystals

Madar¹,

Pernot²,

Anikin³

et al. 2002

J. Phys.: Condens. Matter

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In view of its excellent thermal, mechanical and electronic properties, silicon carbide is the reference semiconductor material for high-temperature, highfrequency and high-power devices.Ingots of monocrystalline SiC which are currently grown by the seeded sublimation growth technique have opened the path to the production of largearea SiC wafers. Despite constant progress in crystal growth, the development of industrial applications has been up to now severely limited by the insufficient quality and size of the substrates. This situation results mainly from the fact that the growing process is quite complex. As a consequence, it is quite difficult to control the growth of a given polytype and the doping level while decreasing the number of defects such as misoriented domains, inclusions, macrodefects and micropipes.This paper is mainly devoted to a review of our work on the influence of the seed characteristics and the growth process parameters, such as the thermal field and the pressure, on the occurrence of defects in the as grown ingot and on the enlargement process. Polytype identification and morphology, structural perfection and defect analyses have been carried out using mainly polarized light microscopy and x-ray white-beam synchrotron topography.

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Section: Crystal Growthmentioning

confidence: 99%

Defects in sublimation-grown SiC bulk crystals

Madar¹,

Pernot²,

Anikin³

et al. 2002

J. Phys.: Condens. Matter

Self Cite

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“…Both results agree very well to our experimental finding and results presented in literature. for example, 18,[23][24][25] Moreover, we have also checked the influence of a mechanochemical activation due to misfit stresses caused by different lattice constants and expansion coefficents of the substrate and the epitaxial layer. Such a misfit leads to a further increase of saturation vapor pressures p 0 above, for example, the cubic SiCphase on hexagonal SiC due to the strain energy ε = (∆a) 2 γ/2, (p = p 0 exp(2ε/κT)), 54 where γ is the bonding force constant amounting to 3.1 N/cm.…”

Section: Thermodynamical Considerations Of Polytype Growthmentioning

confidence: 99%

“…In general, on the SiC(0001) Si-face, there is a greater tendency for the occurrence of 3C-SiC than on the (0001)C-face. 25 We report about results of different growth studies of SiC on α-SiC(0001), necessary to realize multiheterostructures of different polytypes, such as 4H/ 3C/4H. Experiments have been performed between 1200 and 1600K by means of solid-source MBE.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms of homo- and heteroepitaxial growth of SiC on α-SiC(0001) by solid-source molecular beam epitaxy

Fissel

Pfennighaus

Kaiser

et al. 1999

Journal of Elec Materi

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Epitaxial growth of SiC on hexagonal (or α)-SiC(0001) has been performed by means of solid-source molecular beam epitaxy (MBE). The solid-source MBE growth conditions have been analyzed concerning the supersaturation and the excess phase formation of silicon and carbon. In general, our results demonstrate that control of the Si/C ratio and the supersaturation (S) is essential for the growth mode and the kind of polytype grown. Low temperature (T<1450K) deposition on on-axis SiC substrates always results in the growth of 3C-SiC, which is significantly improved by an alternating supply of Si and C. On vicinal substrates, a step flow growth mode has been realized at T down to 1300K. In experiments performed at T>1450K under near surface equilibrium conditions, different growth modes, and conditions stabilizing the growth of certain polytypes have been found. With a step decrease of S, a step-flow growth mode of both 4H-and 6H-SiC was obtained and, for the first time in case of epitaxial SiC growth, a homogeneous nucleation of α-SiC at more C-rich conditions has been realized. Conditions stabilizing the growth of certain polytypes have been estimated by thermodynamic calculations considering the influence of polytype structure on the supersaturation and the surface energy. Based on these results, we have demonstrated the growth of a double-heterostructure by firstly growing a 3C-SiC layer on 4H-SiC(0001) at low temperature and a subsequent growth of 4H-SiC under near surface equilibrium conditions on a C-stabilized surface on top of this layer.

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