Experimental identification of the energy level of substitutional manganese in silicon

Haider, Muhammad Zulqurnain; Sitter, H.; Czaputa, R.; Feichtinger, H.; Oswald, J.

doi:10.1063/1.339217

Cited by 12 publications

(3 citation statements)

References 21 publications

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“…Finally, there are a few quantitative studies about the defect parameters of substitutional manganese in silicon, 6,[9][10][11] indicating that Mn s exists in three charge states, leading to an acceptor level in the upper-band-gap half and a donor level in the lower-band-gap half.…”

Section: Introductionmentioning

confidence: 99%

Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

Roth

Rosenits

Diez

et al. 2007

Journal of Applied Physics

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Boron-doped silicon wafers implanted with low doses of manganese have been analyzed by means of deep-level transient spectroscopy (DLTS), injection-dependent lifetime spectroscopy, and temperature-dependent lifetime spectroscopy. While DLTS measurements allow the defect levels and majority carrier capture cross sections to be determined, the lifetime spectroscopy techniques allow analysis of the dominant recombination levels and the corresponding ratios of the capture cross sections. Interstitial manganese and manganese-boron pairs were found to coexist, and their defect parameters have been investigated. In good agreement with the literature, this study identifies the defect level of manganese-boron pairs to be located in the lower half of the band gap at an energy level of E-v+0.55 eV with a majority carrier capture cross section of sigma(p)=3.5x10(-13) cm(2). The capture cross-section ratio was found to be k=sigma(n)/sigma(p)=6.0. This implies that the previously unknown minority carrier capture cross section is sigma(n)=2.1x10(12) cm(2). Concerning the defect related to interstitial manganese, this study identifies the most recombination-active level to be located in the upper half of the band gap at E-C-0.45 eV with a corresponding ratio of the capture cross sections of k=9.4. In addition, the temperature-dependent association time constant of manganese-boron pairs is determined to be tau(assoc,Mn)=8.3x10(5) K-1 cm(-3) (T/N-dop)exp(0.67 eV/k(B)T) and found to differ from that for iron by a factor of 3 at room temperature, allowing this association time constant to be used as a fingerprint for a possible contamination with manganese. Also, the diffusion coefficient of interstitial manganese in silicon is determined from these experiments in a temperature range from 70 to 120 degrees C. It can be represented by the expression D-Mn=6.9x10(-4) cm(2) s(-1) exp(-0.67 eV/k(B)T)

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Section: Introductionmentioning

confidence: 99%

Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

Roth

Rosenits

Diez

et al. 2007

Journal of Applied Physics

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“…There is a quite well-established body of knowledge from electron paramagnetic resonance (EPR), electron spin resonance (ESR) and deep-level transient spectroscopy (DLTS) studies on the structure, charge states and energy levels of Mn-related centres in silicon [4][5][6][7][8][9]. DLTS studies have also revealed information about the majority carrier capture cross sections of some of these levels [1].…”

Section: Chemical States Of Manganese In Siliconmentioning

confidence: 99%

Recombination activity of manganese in p- and n-type crystalline silicon

Macdonald

Rosenits

Deenapanray

2007

Semicond. Sci. Technol.

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Silicon wafers implanted with low doses of manganese were annealed at 900• C to distribute the Mn throughout the sample volume, and were subjected to carrier lifetime measurements. The Mn centres thus introduced were found to decrease the recombination lifetime in both n-and p-type silicon, although the impact was greater in p-type silicon for resistivities near 1 cm. For both p-and n-type samples, the bulk lifetime decreased approximately in proportion to the Mn implantation dose. Comparison with the known effects of other metals on the carrier lifetime in p-type silicon suggest that Mn is less detrimental than point-like Fe or Cr impurities, but more dangerous than Cu or Ni, which tend to precipitate. In n-type silicon on the other hand, Mn was found to have similar recombination activity to Fe, Ni and Cu.

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“…The likelihood of each process is highly a function of the phase diagrams in question [22]; additional evidence for a particular reaction pathway is provided by the microor nano-scale phase morphology. Finally, in studies of metal point defects in silicon, new or absent deep-level transient spectroscopy peaks observed in Si contaminated with multiple-metal species have been attributed to M1-M2 pairs [23][24][25], and yet others have been predicted [25,26] through simulations.…”

Section: Introductionmentioning

confidence: 99%