Electronic properties and dopant pairing behavior of manganese in boron-doped silicon

Abstract

Boron-doped silicon wafers implanted with low doses of manganese have been analyzed by means of deep-level transient spectroscopy (DLTS), injection-dependent lifetime spectroscopy, and temperature-dependent lifetime spectroscopy. While DLTS measurements allow the defect levels and majority carrier capture cross sections to be determined, the lifetime spectroscopy techniques allow analysis of the dominant recombination levels and the corresponding ratios of the capture cross sections. Interstitial manganese and manganese-boron pairs were found to coexist, and their defect parameters have been investigated. In good agreement with the literature, this study identifies the defect level of manganese-boron pairs to be located in the lower half of the band gap at an energy level of E-v+0.55 eV with a majority carrier capture cross section of sigma(p)=3.5x10(-13) cm(2). The capture cross-section ratio was found to be k=sigma(n)/sigma(p)=6.0. This implies that the previously unknown minority carrier capture cross section is sigma(n)=2.1x10(12) cm(2). Concerning the defect related to interstitial manganese, this study identifies the most recombination-active level to be located in the upper half of the band gap at E-C-0.45 eV with a corresponding ratio of the capture cross sections of k=9.4. In addition, the temperature-dependent association time constant of manganese-boron pairs is determined to be tau(assoc,Mn)=8.3x10(5) K-1 cm(-3) (T/N-dop)exp(0.67 eV/k(B)T) and found to differ from that for iron by a factor of 3 at room temperature, allowing this association time constant to be used as a fingerprint for a possible contamination with manganese. Also, the diffusion coefficient of interstitial manganese in silicon is determined from these experiments in a temperature range from 70 to 120 degrees C. It can be represented by the expression D-Mn=6.9x10(-4) cm(2) s(-1) exp(-0.67 eV/k(B)T)

Charge transient spectroscopy measurements of metal‐oxide‐semiconductor

“…The energy levels EH1 and EH2 are the result of the evaluation directly from the maximum of the filter function. These levels correspond good with the values of Roth [7]. But from the fit of the original transient we can see the split of level EH1 in E2 and E3, EH2 in E4 and E5.…”

Direct observation of the lattice sites of implanted manganese in silicon

“…These difficulties result to a large extent from the difficulty to probe and control the Mn incorporation in different configurations: substitutional, interstitial and precipitates of different compounds and structures. The excessively low solubility of Mn 9 combined with its high interstitial diffusivity (activation energy of ∼ 0.67-0.72 eV) 10,11 results in the formation of precipitates, so that at higher Mn concentrations isolated Mn in interstitial or substitutional form is not easily obtained. An example of secondary phase segregation is the formation of MnSi 1.7 silicides.…”

Drawing the geometry of 3d transition metal-boron pairs in silicon from electron emission channeling experiments

“…Therefore, Fe can easily interact with B À . Previous studies based on Mössbauer spectroscopy (MS) and electron paramagnetic resonance (EPR), which are sensitive to the local environment of the TMs, addressed the configuration of such pairs [1][2][3][4][5]. The results showed that the local environment of Fe has a trigonal h1 1 1i symmetry, within FeB pairs [6][7][8].…”

“…The fact that the near-T fraction increases in both doping types following annealing above 300°C indicates that the majority of complexes involved in this annealing temperature range is related to the multivacancies formed during the ion implantation, and not with the pairs with boron. Although Mn is The orange lines regards the deep donor levels that has some implications on the charge state when changing the doping from n-to p þ -type Si [3,5,6,18,19]. (For interpretation of the references to color in this figure legend, the reader is referred to the web version of this article.)…”