Experimental Evidence for Involvement of Interface States in Random Telegraph Noise in Junction Leakage Current of Metal–Oxide–Semiconductor Field-Effect Transistor

Abstract

It was experimentally found that an interface state causes variable junction leakage (VJL), namely, random telegraph noise in a reverse-biased junction leakage current which is one result of off-state drain leakage in metal–oxide–semiconductor field-effect transistors (MOSFETs). We prepared deep-submicron-scale MOSFETs of which the defect densities of the Si/SiO2 interface were controlled by the annealing conditions. It was confirmed that the occurrence rate of VJL changes with the density of interface states. Furthermore, it was shown that the mechanism of VJL is similar to that of random telegraph noise (RTN) in drive current.

Low-frequency noise in nanowires

“…66,73,76,107,109,112,114,132,174,175 In newer, highly scaled technologies, defect-passivation treatments such as high-pressure annealing in hydrogen or deuterium have been effective in reducing LF noise and RTN. [176][177][178][179]…”