Experimental evaluation of MgO sputtering yields by monochromatic Ne, Kr, or Xe ion beams

Hine, Kiyohiro; Yoshimura, Satoru; Ikuse, Kazumasa; Kiuchi, Masato; Hashimoto, Jun; Terauchi, M.; Nishitani, Mikihiko; Hamaguchi, Satoshi

doi:10.1016/j.tsf.2008.08.127

Cited by 33 publications

(24 citation statements)

References 9 publications

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“…The film mass change on the QCM crystal can be monitored by a QCM controller (ULVAC-CRTM9000). The mass resolution of the QCM system is 2.4×10 −11 g. With this QCM system, we have measured sputtering yields of Au [8] and magnesium oxide (MgO) [9,10] by He, Ne, Ar, Kr, or Xe ion beams and found that the measured sputtering yields agree well with earlier data obtained by other experimental groups.…”

Section: Methodssupporting

confidence: 79%

Low Energy Metal Ion Beam Production with a Modified Freeman-Type Ion Source for Development of Novel Catalysts

Yoshimura

Kiuchi

Nishimoto

et al. 2012

e-J. Surf. Sci. Nanotechnol.

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Interactions of indium (In) and silicon (Si) atoms have been found to catalyze certain organic chemical reactions with high efficiency. In a recent paper [S. Yoshimura, et al., Appl. Surf. Sci., 257, 192 (2010)], it has been demonstrated that an In injected SiO2 thin film formed under specific ion beam conditions catalyzes a reaction of benzhydrol with acetylacetone. In this study a technique to implant bismuth (Bi) ions into SiO2 thin films has been developed with highly controlled ion doses and injection energies for the formation of thin films that promote Bi(III) catalysis in organic chemistry. For this purpose, the Freeman-type ion source of our beam system was modified with a new sputtering target. In addition, sticking probabilities of Bi have been obtained with the use of a quartz crystal microbalance. Although efficiency of catalytic reactions by a Bi implanted SiO2 thin film is yet to be improved, the technique provides a Bi-Si based novel catalyst of a thin film type.

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Section: Methodssupporting

confidence: 79%

Low Energy Metal Ion Beam Production with a Modified Freeman-Type Ion Source for Development of Novel Catalysts

Yoshimura

Kiuchi

Nishimoto

et al. 2012

e-J. Surf. Sci. Nanotechnol.

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“…Results in agreement with those just mentioned can also be observed for 3D porous scaffolds (Table 2); a lower magnesium content in comparison with the corresponding flat samples can be noted, which is closely related to the analytical problems that the morphology and structure of these porous samples can cause. The different outcomes obtained by varying the feed composition are attributable to the impact of the latter on the RF sputter process from the MgO target, which is known to affect the sputtering yield [37][38][39][40][41]. It is possible to conclude that under the experimental conditions used in this work, H 2 O feed shows a lower capacity than Ar and Ar/H 2 O to sputter Mg from the target, while the H 2 feed exhibits a higher ability to sputter the same material compared with Ar and Ar/H 2 mixtures.…”

Section: Chemical and Physical Characterization Of Pcl Flat Samples Amentioning

confidence: 99%

“…As a result, a decrease in the sputter rate can occur because the binding energy of the compounds is much higher than that of pure metals. On the contrary, when H 2 is used as a reactive gas, it can promote the etching of the oxygen present on the target and the formation of metallic Mg, which can be easily sputtered due to its higher sputter rate compared to MgO [37][38][39][40][41]. In fact, after the sputtering process performed with H 2 , the color of the target's surface turns grayish, which is indicative of the formation of metallic Mg.…”

Section: Chemical and Physical Characterization Of Pcl Flat Samples Amentioning

confidence: 99%

Plasma-Assisted Deposition of Magnesium-Containing Coatings on Porous Scaffolds for Bone Tissue Engineering

et al. 2020

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Magnesium plays a pivotal role in the formation, growth, and repair of bone tissue; therefore, magnesium-based materials can be considered promising candidates for bone tissue engineering. This study aims to functionalize the surfaces of three-dimensional (3D) porous poly-ε caprolactone (PCL) scaffolds with magnesium-containing coatings using cold plasma-assisted deposition processes. For this purpose, the radiofrequency (RF) sputtering of a magnesium oxide target was carried out in a low-pressure plasma reactor using argon, water vapor, hydrogen, or mixtures of argon with one of the latter two options as the feed. Plasma processes produced significant differences in the chemical composition and wettability of the treated PCL samples, which are tightly related to the gas feed composition, as shown by X-ray photoelectron spectroscopy (XPS) and water contact angle (WCA) analyses. Cytocompatibility assays performed with Saos-2 osteoblast cells showed that deposited magnesium-containing thin films favor cell proliferation and adhesion on 3D scaffold surfaces, as well as cell colonization inside them. These films appear to be very promising for bone tissue regeneration.

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“…The mass resolution of the QCM system is 2.4×10 −11 g. For details of the measurement system, the reader is referred to Ref. [20]. With this system, we have measured sputtering yields of MgO [20] and Au [21] by He, Ne, Ar, Kr, and Xe ion beams.…”

Section: B Gallium Ion Beam Experimentsmentioning

confidence: 99%

Low Energy Indium or Gallium Ion Implantations to SiO<sub>2 </sub>Thin Films for Development of Novel Catalysts

Yoshimura

Kiuchi

Nishimoto

et al. 2014

e-J. Surf. Sci. Nanotechnol.

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In an earlier paper [S. Yoshimura et al., Appl. Surf. Sci. 257, 192 (2010)], it has been demonstrated that indium (In) implanted silicon dioxide (SiO2) thin films catalyze a reaction of benzhydrol with acetylacetone. In this study, it is found that the threshold In ion incident energy for manifestation of the catalytic effect exists between 400 and 470 eV. Furthermore, a technique to implant gallium (Ga) to SiO2 films has been developed with highly controlled doses and injection energies for the formation of thin films that promote Ga catalysts. The efficiency of catalytic reactions by Ga implanted SiO2 thin films is yet to be improved. Unlike In implanted SiO2, the reason why no significant reaction was observed in the case of Ga implanted SiO2 films examined in this study seems that the Ga ion energy was so low that deposited surface Ga atoms should lack interactions with Si atoms for the manifestation of catalytic reaction.

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Experimental evaluation of MgO sputtering yields by monochromatic Ne, Kr, or Xe ion beams

Cited by 33 publications

References 9 publications

Low Energy Metal Ion Beam Production with a Modified Freeman-Type Ion Source for Development of Novel Catalysts

Low Energy Metal Ion Beam Production with a Modified Freeman-Type Ion Source for Development of Novel Catalysts

Plasma-Assisted Deposition of Magnesium-Containing Coatings on Porous Scaffolds for Bone Tissue Engineering

Low Energy Indium or Gallium Ion Implantations to SiO<sub>2 </sub>Thin Films for Development of Novel Catalysts

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