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Photoluminescence spectroscopy and energy-level analysis of metal-organic-deposited Ga2O3:Cr3+ films J. Appl. Phys. 112, 063522 (2012) Electrical and optical properties of vanadium dioxide containing gold nanoparticles deposited by pulsed laser deposition Appl. Phys. Lett. 101, 133102 (2012) Controlling spatial distribution of thermal poling induced second-order optical nonlinearity with multilayered structures Appl. Phys. Lett. 101, 101101 (2012) Optical characteristic of sol-gel synthesized lead lanthanum titanate-cobalt iron oxide multiferroic composite thin film J. Appl. Phys. 112, 043520 (2012) Electrical and Fourier transform infrared properties of epitaxial SmNiO3 tensile strained thin film Titanium dioxide (TiO 2 ) thin films were deposited on unheated quartz (SiO 2 ) substrates in ''pure oxygen'' plasma by reactive radio-frequency ͑rf͒ magnetron sputtering. The structural and optical properties of deposited films were systematically studied by changing the deposition parameters, and it was very recently found that crystalline TiO 2 films grew effectively in pure O 2 atmosphere. For TiO 2 films deposited at a rf power P rf of 200 W, x-ray diffraction patterns show the following features: ͑a͒ no diffraction peak was observed at a total sputtering pressure p tot of 1.3 Pa; ͑b͒ rutile ͑110͒ diffraction was observed at 4.0 Pa, ͑c͒ the dominant diffraction was from anatase ͑101͒ planes, with additional diffraction from ͑200͒, under p tot between 6.7 and 13 Pa. For the deposition at 140 W, however, crystalline films with mixed phases were observed only between 4.0 and 6.7 Pa. The peaks of both the deposition rate and the anatase weight ratio for the films produced at 140 W were found at p tot of approximately 6.7 Pa. This suggests that the nucleation and growth of TiO 2 films were affected by the composition, density, and kinetic energy of the particles impinging on the substrate surface. The optical absorption edge analysis showed that the optical band gap E g and the constant B could sensitively detect the film growth behavior, and determine the film structure and optical absorption. The change in the shape of the fundamental absorption edge is considered to reflect the variation of density and the short-range structural modifications.

Nanoscale mechanical behavior of vanadium doped ZnO piezoelectric nanofiber by nanoindentation techniqueLateral field excitation of thickness shear mode waves in a thin film ZnO solidly mounted resonator Investigation of Li-doped ferroelectric and piezoelectric ZnO films by electric force microscopy and Raman spectroscopy Appl. Phys. Lett. 79, 812 (2001); 10.1063/1.1391225 Two-step metalorganic chemical vapor deposition growth of piezoelectric ZnO thin film on SiO 2 /Si substrate J.ZnO polycrystalline films have a strong tendency to grow their c-axis perpendicular to the film surface, even on an amorphous substrate. However, unusual ͑1010͒ preferred orientations in which the c-axis lies in the substrate plane are often observed when the film is exposed to ion irradiation during its growth. To investigate the effect of ion irradiation on the ͑1010͒ preferred orientation, ZnO films were fabricated using a 0-1 keV oxygen ion-beam-assisted electron-beam evaporation of zinc. The results clearly indicated that the tendency of ͑1010͒ preferred orientation was enhanced with increasing ion energy and amount of ion irradiation. This demonstrated that the ion bombardment induced the ͑0001͒ preferred orientation to change into a ͑1010͒ preferred orientation which corresponds to the ion channeling direction. An in-plane preferred orientation was also obtained, probably because of deviations in the incident ion-beam direction from 5°to the substrate surface normal. These in-plane textured ͑1010͒ ZnO films, fabricated under the ion-beam irradiation of 0.5-1 keV, excited a shear acoustic wave without any longitudinal wave. The highest shear mode electromechanical coupling coefficient was found to be k 15 = 0.16 in the film with ion-beam irradiation of 1 keV. This k 15 value corresponds to 60% of that in a ZnO single crystal ͑k 15 = 0.26͒.

Fragmentation of polyethers, such as poly(ethylene glycol) (PEG), poly(propylene glycol) and poly(tetramethylene glycol) was analyzed by matrix-assisted laser desorption/ionization tandem mass spectrometry (MALDI-MS/MS) using a quadrupole ion trap time-of-flight mass spectrometer (QIT-ToF). The Li adduct ion provided more abundant fragments than the Na and K adduct ions in the MS/MS spectra. A previous study had demonstrated four series fragments of hydroxyl-, vinyl- and formyl-terminated ions, as well as distonic cations, in high-energy fast atom bombardment MS/MS and MALDI collision-induced dissociation measurements of poly(ethylene glycol). In the present study, the low-energy MS/MS measurements using MALDI-QIT-ToF, showed hydroxyl-, vinyl- and formyl- terminated fragments with or without other fragment groups, but not distonic cations. The fragmentation depended on the types of polyethers examined. MS/MS measurements using MALDI-QIT-ToF are expected to allow structural characterization of unknown components of polyethers.